Improving　light　extraction　efficiency　is　the　key　issue　for　light-emitting　diodes　(LEDs).　Nowadays,　a　vertical　structure　design　dominates　LEDs.　However,　the　light　from　the　active　region　just　below　the　p-electrode　is　severely　blocked　by　the　metal　contact.　In　this　letter,　we　use　proton　implantation　with　a　depth　all　the　way　to　the　active　region　to　turn　the　part　beneath　the　p-pad　insulating,　which　constitutes　the　most-effective-ever　current　blocking　method.　Earlier　particle　implantation　studies　never　reached　the　device　active　region.　Our　experimental　results　show　that　the　H+-implanted　LEDs　improve　the　light　output　power　by　75%　compared　with　non-implanted　counterparts　and　the　light　intensity　increases　by　64.48%.　By　virtue　of　indium　tin　oxide　current　spreading　film,　the　increase　in　working　voltage　is　negligible.　Analyzing　the　reverse　leakage　current,　the　side　effect　associated　with　the　implantation　is　limited　to　an　acceptable　range.　Numerical　simulation　is　performed　to　support　the　experiment.　Our　results　represent　a　new　and　simple　method　for　solving　the　light　blocking　problem　in　vertical　LEDs,　without　introducing　the　seemingly　existing　severe　implantation　damage　to　the　device　structure.