In　this　study,　enhancements　of　the　carrier　transport　properties　of　p-type　＜　100　＞-oriented　Si　whiskers　are　observed　under　uniaxial　tensile　and　compressive　strains.　It　has　been　found　that　over　400%　enhancement　of　electrical　conductivity　is　achieved　under　a　2%　tensile　strain,　while　a　2%　compressive　strain　can　only　cause　similar　to　80%　conductivity　enhancement.　The　enhancements　are　mainly　attributed　to　the　breaking　of　the　degeneracy　of　the　v2　and　v1　valence　bands　induced　a　reduction　of　the　hole　effective　mass.　This　study　provides　an　important　insight　of　how　the　carrier　mobility　variation　caused　by　the　strain　impact　on　their　transport　properties.　(C)　2014　AIP　Publishing　LLC.