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Author:

Pan, Wei (Pan, Wei.) | Phillpot, Simon R. (Phillpot, Simon R..) | Wan, Chunlei (Wan, Chunlei.) | Chernatynskiy, Aleksandr (Chernatynskiy, Aleksandr.) | Qu, Zhixue (Qu, Zhixue.)

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EI Scopus SCIE

Abstract:

Oxides hold great promise as new and improved materials for thermal-barrier coating applications. The rich variety of structures and compositions of the materials in this class, and the ease with which they can be doped, allow the exploration of various mechanisms for lowering thermal conductivity. In this article, we review recent progress in identifying specific oxides with low thermal conductivity from both theoretical and experimental perspectives. We explore the mechanisms of lowering thermal conductivity, such as introducing structural/chemical disorder, increasing material density, increasing the number of atoms in the primitive cell, and exploiting the structural anisotropy. We conclude that further systematic exploration of oxide crystal structures and chemistries are likely to result in even further improved thermal-barrier coatings.

Keyword:

Author Community:

  • [ 1 ] [Pan, Wei]Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
  • [ 2 ] [Phillpot, Simon R.]Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
  • [ 3 ] [Chernatynskiy, Aleksandr]Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
  • [ 4 ] [Wan, Chunlei]Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648601, Japan
  • [ 5 ] [Qu, Zhixue]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China

Reprint Author's Address:

  • [Pan, Wei]Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

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Source :

MRS BULLETIN

ISSN: 0883-7694

Year: 2012

Issue: 10

Volume: 37

Page: 917-922

5 . 0 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 182

SCOPUS Cited Count: 320

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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