We　propose　a　new　method　of　using　conductive　glue　to　agglutinate　GaAs　based　AlGaInP　light　emitting　diodes　(LEDs)　onto　silicon　substrate,　and　the　absorbing　GaAs　layer　is　subsequently　removed　by　grinding　and　selective　wet　etching.　It　was　found　that　AlGaInP-Si　glue　agglutinated　LEDs　have　larger　saturation　current　and　luminous　intensity　than　the　conventional　LEDs　working　at　the　same　injected　current.　The　luminous　intensity　of　the　new　device　is　as　much　as　1007.4　mcd　at　a　saturation　current　of　125　mA　without　being　encapsulated,　while　the　conventional　LEDs　only　have　266.2　mcd　at　a　saturation　current　of　105　mA.　The　luminescence　intensity　is　also　found　to　increase　by　about　3.2%　after　working　at　50　mA　for　768　h.　This　means　that　the　new　structured　LEDs　have　good　reliability　performance.