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Author:

Guo, Fu (Guo, Fu.) (Scholars:郭福) | Xu, Guangchen (Xu, Guangchen.) | He, Hongwen (He, Hongwen.) | Zhao, Mengke (Zhao, Mengke.) | Sun, Jia (Sun, Jia.) | Wang, C. Henry (Wang, C. Henry.)

Indexed by:

EI Scopus SCIE

Abstract:

Numerous electronic system failures have been attributed to short circuits caused by metal whiskers that bridged closely spaced circuit elements when they were maintained in a high-current-density environment. Typically, in single-phase interconnect materials, atoms are driven from the cathode to the anode and a compressive stress can build up at the anode end of the stripe, which can induce the formation of whiskers and hillocks. However, the electronic solders used in interconnects are multiphase materials where primary and secondary diffusion atoms/ions exist. In order to accelerate the growth of whiskers and hillocks, a high current density (10(4) A/cm(2)) combined with high ambient temperatures (80A degrees C) was applied to eutectic Sn-Bi solder joints. Metal whiskers and hillocks were observed on the overflowed solder film above the Cu substrate. However, in the absence of the electric field, metal whiskers and hillocks could also be squeezed out from the solder reaction films after several days of isothermal aging (125A degrees C), demonstrating that the chemical reaction between Sn atoms and Cu atoms can provide the driving force for the formation and growth of metal whiskers and hillocks.

Keyword:

isothermal aging metal hillock metal whisker Electromigration

Author Community:

  • [ 1 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 2 ] [Xu, Guangchen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 3 ] [He, Hongwen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 4 ] [Zhao, Mengke]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 5 ] [Sun, Jia]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 6 ] [Xu, Guangchen]Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
  • [ 7 ] [Wang, C. Henry]Henkel Corp, Elect Grp, Irvine, CA USA

Reprint Author's Address:

  • 郭福

    [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China

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Source :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

Year: 2009

Issue: 12

Volume: 38

Page: 2647-2658

2 . 1 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:2

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 15

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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