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Abstract：
A single crystalline Mg2Si film was formed by solid phase reaction (SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s), which was enhanced by post annealing from room temperature to 100 degrees C in a molecular beam epitaxy (MBE) system. The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300 degrees C, 450 degrees C and 650 degrees C, respectively. The Mg2Si film stayed stable until the annealing temperature reached 450 degrees C then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.
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CHINESE PHYSICS B
ISSN： 1674-1056
Year： 2009
Issue： 7
Volume： 18
Page： 3079-3083
1 . 7 0 0
JCR@2022
ESI Discipline： PHYSICS;
JCR Journal Grade：2
CAS Journal Grade：1
Cited Count：
WoS CC Cited Count： 16
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 1
Affiliated Colleges：
