La0.85Sr0.15MnO3　(LSMO)/TiO2　heterostructures　were　synthesized　by　RF　magnetron　sputtering　with　different　LSMO　thicknesses.　Rectifying　properties　of　the　junctions　are　related　to　the　LSMO　thickness　and　good　rectifying　properties　appear　in　a　LSMO　(100　nm)/TiO2　junction.　Furthermore,　the　excellent　rectifying　characteristic　is　presented　in　a　relatively　wide　temperature　range　for　LSMO　(100　nm)/TiO2　heterostructures.　All　samples　exhibit　a　huge　effective　resistance　which　plays　an　important　role　in　the　current-voltage　curves　as　well　as　the　rectifying　properties.　The　diffusion　potential　of　the　heterostructures　decreases　with　increasing　measurement　temperature,　which　is　attributed　to　the　modulation　of　the　interface　electronic　structure　of　LSMO/TiO2　heterostructures.　It　is　worth　noting　that　the　metal-insulator　(M-I)　transition　of　LSMO　also　appears　in　the　heterostructures　and　the　increased　sheet　resistance　of　heterostructures　at　low　temperature　is　related　to　the　introduction　of　TiO2.