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Abstract:
基于器件Y参数,对Si/Si1-xGex HBT的高频噪声进行了模拟.Si/Si1-xGex HBT的高频最小噪声系数随Ge组份x的增加而减小.与Si BJT相比,Si/SiGe HBT具有优异的高频噪声特性.
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微电子学
ISSN: 1004-3365
Year: 2006
Issue: 1
Volume: 36
Page: 27-29
Cited Count:
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: 11
Chinese Cited Count:
30 Days PV: 3
Affiliated Colleges: