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Epitaxial Mg2Si(110) thin film has been obtained on Si(111) substrate by thermally enhanced solid-phase reaction of epitaxial Mg film with underlying Si substrate. An epitaxial orientation relationship of Si(111)parallel to Mg2Si(110) and Si < 1 (1) over bar0 >parallel to Mg2Si < 1 (1) over bar0 > has been revealed by transmission electron microscopy. The formation of the unusual epitaxial orientation relationship is attributed to the strain relaxation of Mg2Si film in a MgO/Mg2Si/Si double heterostructure. (c) 2007 American Institute of Physics.
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JOURNAL OF APPLIED PHYSICS
ISSN: 0021-8979
Year: 2007
Issue: 12
Volume: 102
3 . 2 0 0
JCR@2022
ESI Discipline: PHYSICS;
JCR Journal Grade:1
Cited Count:
WoS CC Cited Count: 25
SCOPUS Cited Count: 28
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 0
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