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Abstract：
A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl-2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photoresist SiO2 and Ni masks on the resultant profiles were also studied by scanning electron microscopy. A maximum etch rate of 8.9 mu m/min was obtained and the etched profiles were optimized.
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SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES
ISSN： 1006-9321
Year： 2007
Issue： 6
Volume： 50
Page： 749-754
JCR Journal Grade：4
Cited Count：
WoS CC Cited Count： 4
SCOPUS Cited Count： 3
ESI Highly Cited Papers on the List： 0 Unfold All
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Chinese Cited Count：
30 Days PV： 0
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