The　maximum　dielectric　permittivity　of　Ti-doped　Ta2O5　ceramics　may　reach　450　by　a　laser-sintering　technique.　The　aim　of　this　study　is　to　investigate　the　mechanisms　of　the　dielectric　enhancement　based　on　the　unique　structural　and　morphological　properties　of　the　laser-sintered　ceramics.　The　reason　for　the　dielectric　enhancement　is　due　to　the　crystal　structure　distortion　in　the　high-temperature　phase,　the　oriented　grain　growth　taking　place　in　a　direction　deviating　from　[001]　in　the　laser-sintered　ceramics.　The　concurrent　nature　of　quenching　effects,　a　sharp　temperature　gradient　and　mass　transfer　in　liquid　phase　originated　from　laser　high　energy　irradiation　with　strict　directivity　leads　to　the　structural　and　morphological　properties.