La-doped　ZnO　films　were　prepared　by　RF　magnetron　sputtering　using　different　composition　powder　compacted　targets　(0,　1,　2,　3　and　5　at.%).　All　films　show　a　preferred　c-axis　growth　orientation.　Furthermore,　the　(002)　diffraction　peak　shifts　to　a　small　angle　and　the　full-width　at　half　maximum　augments　with　increasing　La　concentration　up　to　2　at.%,　which　indicate　that　a　small　quantity　of　La　atoms　are　incorporated　into　the　ZnO　lattice.　The　average　transmittance　in　the　visible　range　is　over　80%,　and　a　blue　shift　of　the　absorption　edge　is　observed.　With　increasing　La　concentration,　the　band　gap　of　ZnO　films　evaluated　by　the　linear　fitting　linearly　increases　from　3.270　to　3.326　eV　In　the　photolummescence　spectra,　a　strong　violet　emission　peak　and　a　weak　green　emission　band　can　be　observed.　The　former　is　due　to　the　electron　transition　between　the　defect　energy　levels,　associated　with　the　interfacial　traps　existing　at　the　ZnO　grain　boundaries,　and　valence　band.　The　latter　could　be　ascribed　to　crystal　defects　related　to　oxygen　vacancies.　(c)　2006　Elsevier　B.V.　All　rights　reserved.