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Abstract:
提出了一种快速评价GaAs FET可靠性寿命的新方法.利用GaAs FET失效敏感参数的温度特性和在一定电应力下的退化特性,及温度斜坡法在线快速提取器件失效敏感参数的退化量与温度的关系,从而进一步求出器件的失效激活能等相关的可靠性物理参数.
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Source :
半导体学报
ISSN: 0253-4177
Year: 2003
Issue: 8
Volume: 24
Page: 856-860
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: 21
Chinese Cited Count:
30 Days PV: 0
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