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Author:

Shu, XW (Shu, XW.) | Xu, C (Xu, C.) (Scholars:徐晨) | Tian, ZX (Tian, ZX.) | Shen, GD (Shen, GD.)

Indexed by:

Scopus SCIE CSCD

Abstract:

We report a simple and available way of improving the reliability of high power InGaAs 980 nm lasers by cleaning the facets using Ar ion before the protecting films have been coated. The Ar cleaning can remove the impurity and the oxide on the air-cleaved facets of laser diodes. It is proven that the way has marked effect on reducing the gradual degradation rate of laser diodes and improving the catastrophic-optical-damage threshold.

Keyword:

Author Community:

  • [ 1 ] Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China

Reprint Author's Address:

  • [Shu, XW]Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China

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Source :

CHINESE PHYSICS LETTERS

ISSN: 0256-307X

Year: 2006

Issue: 1

Volume: 23

Page: 124-125

3 . 5 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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