Abstract:
本文简述了绝缘栅双极型晶体管(IGBT)的结构、性能,分析了其发展历程,从能耗、制造工艺及设计方面研究了IGBT技术发展的现状,并进一步探讨了人们对新结构、新工艺的探索和对器件高性能的追求。
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Year: 2011
Page: 176-179
Language: Chinese
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: -1
Chinese Cited Count:
30 Days PV: 2
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