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Abstract:
In this paper, the impact of interconnect resistance on 1S1R crossbar array performance is analyzed. Based on elements test results, a crossbar array model is set up considered interconnect resistance. Simulation shows that read margin decreases dramatically when interconnect resistance is too large to keep selector at ON-state, especially under floating scheme. When interconnect resistance is larger than 6 Omega, write margin will drop below 50%, under 1/3 bias scheme. The results show that, the degradation of read margin and write margin caused by interconnect resistance can be suppressed by improving the on/off ratio and low-resistance of selector.
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2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC)
Year: 2019
Language: English
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WoS CC Cited Count: 0
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ESI Highly Cited Papers on the List: 0 Unfold All
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30 Days PV: 1
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