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Author:

Chen, Xiaowei (Chen, Xiaowei.) | Pourbakhsh, Seyed Alireza (Pourbakhsh, Seyed Alireza.) | Hou, Ligang (Hou, Ligang.) | Gong, Na (Gong, Na.) | Wang, Jinhui (Wang, Jinhui.)

Indexed by:

CPCI-S

Abstract:

In three-dimensional (3D) integrated circuit (IC), a large number of dummy through silicon vias (TSV) are required for thermal and thinning concerns. However, limited attention is paid to the fact that these dummy TSVs can be multi-functional and used for timing purposes. In this paper, we propose to use those "timing wasteful" dummy TSVs to replace bit line delay cells. Also, a TSV allocation algorithm is presented to optimize the TSV array layout. Finally, three memory designs are implemented to verify the feasibility and reliability of the proposed technology. It is found that all delay cells in these 3 memories can be replaced by TSV arrays.

Keyword:

3D IC dummy TSV delay cells bit line

Author Community:

  • [ 1 ] [Chen, Xiaowei]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 2 ] [Pourbakhsh, Seyed Alireza]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 3 ] [Gong, Na]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 4 ] [Wang, Jinhui]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 5 ] [Hou, Ligang]Beijing Univ Technol, VLSI, Beijing 100124, Peoples R China
  • [ 6 ] [Hou, Ligang]Beijing Univ Technol, Syst Lab, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Wang, Jinhui]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA

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Source :

2016 5TH INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE)

ISSN: 2378-8593

Year: 2016

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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