A　new　Internal　Transparent　Collector　Insulated　Gate　Bipolar　Transistor　(ITC-IGBT)　is　proposed,　and　600V　ITC-IGBTs　With　planar　gates　are　fabricated.　The　structure　of　the　new　IGBT　is　similar　to　that　of　PT-IGBT,　but　a　very　low　carrier　lifetime　control　layer　(LCLCL)　is　introduced　in　the　collector　region　near　the　p-collector/　n-buffer　junction.　The　LCLCL　is　a　nano　vacancy　layer　which　is　induced　by　high　dose　helium　irradiation　and　followed　by　annealing.　The　devices＇　I-V　characteristics　under　room　and　high　temperatures　and　turn-off　time　under　room　temperature　are　measured.　The　ITC-IGBTs＇　current　density　at　zero　temperature　coefficient　(ZTC)　point　is　about　80A/cm(2),　Which　is　much　lower　than　the　rated　value　(the　current　density　correlated　to　rated　current　is　normally　150-200A/cm(2)).　For　comparison,　PT-IGBTs　with　the　same　structural　dimensions　and　using　electron　irradiation　are　also　fabricated.　The　ITC-IGBTs＇　trade-off　between　V-CEsat　and　turn-off　time　is　better　than　that　of　the　normal　PT-IGBT.　For　example,　the　t(f)　of　the　ITC-IGBT　at　V-CEsat=1.6V　is　about　360ns,　only　60%　that　of　the　PT-IGBT.