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Author:

Liu, Bo (Liu, Bo.) | Zhao, Yudi (Zhao, Yudi.) | Verma, Dharmendra (Verma, Dharmendra.) | Wang, Le An (Wang, Le An.) | Liang, Hanyuan (Liang, Hanyuan.) | Zhu, Hui (Zhu, Hui.) | Li, Lain-Jong (Li, Lain-Jong.) | Hou, Tuo-Hung (Hou, Tuo-Hung.) | Lai, Chao-Sung (Lai, Chao-Sung.)

Indexed by:

EI Scopus SCIE PubMed

Abstract:

The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi2O2Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi2O2Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi2O2Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi2O2Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.

Keyword:

RRAM kinetic Monte Carlo MAGIC CAFM Bi2O2Se

Author Community:

  • [ 1 ] [Zhao, Yudi]Beijing Informat Sci & Technol Univ, Sch Informat & Commun Engn, Beijing 100101, Peoples R China
  • [ 2 ] [Verma, Dharmendra]Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
  • [ 3 ] [Li, Lain-Jong]Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
  • [ 4 ] [Lai, Chao-Sung]Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
  • [ 5 ] [Liu, Bo]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Wang, Le An]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Zhu, Hui]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Liang, Hanyuan]Penn State Univ, Sch Elect Engn & Comp Sci, University Pk, PA 16801 USA
  • [ 9 ] [Li, Lain-Jong]Univ Hong Kong, Dept Mech Engn, Hong Kong Isl, Hong Kong 999077, Peoples R China
  • [ 10 ] [Hou, Tuo-Hung]Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
  • [ 11 ] [Hou, Tuo-Hung]Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
  • [ 12 ] [Lai, Chao-Sung]Chang Gung Univ, Artificial Intelligence & Green Technol Res Ctr, Taoyuan 33302, Taiwan
  • [ 13 ] [Lai, Chao-Sung]Chang Gung Mem Hosp, Dept Nephrol, Linkou 33305, Taiwan
  • [ 14 ] [Lai, Chao-Sung]Ming Chi Univ Technol, Dept Mat Engn, New Taipei 24301, Taiwan

Reprint Author's Address:

  • [Lai, Chao-Sung]Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan;;[Liu, Bo]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China;;[Lai, Chao-Sung]Chang Gung Univ, Artificial Intelligence & Green Technol Res Ctr, Taoyuan 33302, Taiwan;;[Lai, Chao-Sung]Chang Gung Mem Hosp, Dept Nephrol, Linkou 33305, Taiwan;;[Lai, Chao-Sung]Ming Chi Univ Technol, Dept Mat Engn, New Taipei 24301, Taiwan

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2021

Issue: 13

Volume: 13

Page: 15391-15398

9 . 5 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:116

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 2

SCOPUS Cited Count: 17

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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