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Author:

Li, Ya-Chao (Li, Ya-Chao.) | Ge, Chao (Ge, Chao.) | Song, Hai-Ying (Song, Hai-Ying.) | Wang, Peng (Wang, Peng.) | Ma, Xiao-Ran (Ma, Xiao-Ran.) | Liu, Shi-Bing (Liu, Shi-Bing.)

Indexed by:

EI Scopus SCIE

Abstract:

Lattice expansion in hybrid halide perovskite directly affects its photoelectric properties and the stability of perovskite-based optoelectronic devices, which was certified also to closely connect with relevant inducing mechanisms. From the perspective of carrier relaxation dynamics and dielectric properties, we report the results employing ultrafast time-resolved transient and steady-state reflectivity technology to diagnose the lattice expansion occurring in bulk hybrid perovskite MAPbI(3) during continuous illumination and directly heating, respectively. Upon continuous illumination at a constant temperature, there were no evident structural changes in MAPbI(3), but in the condition of naturally temperature changes, the lattice expansion can be induced by continuous light illumination and is consistent with the effect of heat-inducted expansion. The present results are based on the physical mechanism that the change of the electronic structure caused by lattice expansion leads to the change of the dielectric properties in MAPbI(3) and sequentially to the change of light reflectivity.

Keyword:

Author Community:

  • [ 1 ] [Li, Ya-Chao]Beijing Univ Technol, Fac Mat & Mfg, Strong Field & Ultrafast Photon Lab, Beijing 100124, Peoples R China
  • [ 2 ] [Ge, Chao]Beijing Univ Technol, Fac Mat & Mfg, Strong Field & Ultrafast Photon Lab, Beijing 100124, Peoples R China
  • [ 3 ] [Song, Hai-Ying]Beijing Univ Technol, Fac Mat & Mfg, Strong Field & Ultrafast Photon Lab, Beijing 100124, Peoples R China
  • [ 4 ] [Wang, Peng]Beijing Univ Technol, Fac Mat & Mfg, Strong Field & Ultrafast Photon Lab, Beijing 100124, Peoples R China
  • [ 5 ] [Ma, Xiao-Ran]Beijing Univ Technol, Fac Mat & Mfg, Strong Field & Ultrafast Photon Lab, Beijing 100124, Peoples R China
  • [ 6 ] [Liu, Shi-Bing]Beijing Univ Technol, Fac Mat & Mfg, Strong Field & Ultrafast Photon Lab, Beijing 100124, Peoples R China
  • [ 7 ] [Li, Ya-Chao]Beijing Univ Technol, Key Lab Transscale Laser Mfg Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 8 ] [Ge, Chao]Beijing Univ Technol, Key Lab Transscale Laser Mfg Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 9 ] [Song, Hai-Ying]Beijing Univ Technol, Key Lab Transscale Laser Mfg Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 10 ] [Wang, Peng]Beijing Univ Technol, Key Lab Transscale Laser Mfg Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 11 ] [Ma, Xiao-Ran]Beijing Univ Technol, Key Lab Transscale Laser Mfg Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 12 ] [Liu, Shi-Bing]Beijing Univ Technol, Key Lab Transscale Laser Mfg Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 13 ] [Li, Ya-Chao]Beijing Univ Technol, Beijing Engn Res Ctr Laser Technol, Beijing 100124, Peoples R China
  • [ 14 ] [Ge, Chao]Beijing Univ Technol, Beijing Engn Res Ctr Laser Technol, Beijing 100124, Peoples R China
  • [ 15 ] [Song, Hai-Ying]Beijing Univ Technol, Beijing Engn Res Ctr Laser Technol, Beijing 100124, Peoples R China
  • [ 16 ] [Wang, Peng]Beijing Univ Technol, Beijing Engn Res Ctr Laser Technol, Beijing 100124, Peoples R China
  • [ 17 ] [Ma, Xiao-Ran]Beijing Univ Technol, Beijing Engn Res Ctr Laser Technol, Beijing 100124, Peoples R China
  • [ 18 ] [Liu, Shi-Bing]Beijing Univ Technol, Beijing Engn Res Ctr Laser Technol, Beijing 100124, Peoples R China

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Source :

JOURNAL OF APPLIED PHYSICS

ISSN: 0021-8979

Year: 2022

Issue: 1

Volume: 132

3 . 2

JCR@2022

3 . 2 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:41

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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