This　paper　presents　a　pulse　electrical　stress　and　measurement　system　of　GaN　high-electron-mobility　transistors　based　on　FPGA　to　apply　the　electrical　stress　accurately　in　the　form　of　square　wave　pulses　and　switch　to　the　measuring　state　in　time.　The　design　processes　for　the　FPGA　program,　software　system,　and　hardware　circuit　are　discussed.　The　system　uses　a　bipolar　isolated　gate　driver　to　apply　pulses　of　electrical　stress　to　the　gate　of　GaN　HEMTs.　The　mode　switch　circuit　is　used　to　switch　from　＇stress　mode＇to　＇measuring　mode＇to　realize　the　measuring　of　electrical　parameters　of　the　device　under　test　after　stress.　The　system　can　achieve　electrical　pulse　stress　and　assist　in　analyzing　the　degradation　mechanism　of　GaN　HEMTs.　©　Published　under　licence　by　IOP　Publishing　Ltd.