Introducing　other　elements　into　gallium　oxide　materials　to　modify　their　properties　is　a　hot　topic　today.　This　paper　attempts　to　introduce　Bi　element　to　prepare　(BixGa1-x)(2)O-3　alloy　semiconductor　thin　film　by　radio　frequency　co-sputtering,　so　as　to　achieve　precise　and　effective　tuning　of　its　band　gap.　The　sputtering　power　of　Ga2O3　target　remains　constant　at　80　W.　The　content　of　Bi　element　in　the　material　is　adjusted　by　varying　the　sputtering　power　of　the　Bi2O3　target.　Samples　with　different　Bi　doping　concentrations　were　obtained　after　annealing　at　800　degrees　C　for　2　h.　Fortunately,　(BixGa1-x)(2)O-3　semiconductor　alloy　films　were　successfully　prepared　by　radio　frequency　co-sputtering,　and　the　optical　energy　gap　could　be　adjusted　approximately　linearly　in　the　range　of　5.14　to　5.27　eV　by　varying　the　Bi　content.　X-ray　diffraction　and　scanning　electron　microscope　results　show　that　a　phase　transition　occurs　in　the　material　when　the　sputtering　power　of　Bi2O3　is　40　W.　The　results　of　Urbach　energy　and　film　transmittance　indicate　that　moderate　Bi　doping　can　reduce　the　disorder　of　the　material　structure　and　improve　the　transmittance　of　the　film.　However,　excessive　Bi　doping　introduces　more　defects,　increasing　the　scattering　and　absorption　of　the　defects,　ultimately　leading　to　a　reduction　in　film　transmittance.　These　findings　have　propelled　research　in　the　field　of　gallium　oxide　doping　and　its　band　gap　modulation.