InGaAs　nanowires　(NWs)　are　an　important　tunable　direct　bandgap　III-V　semiconductor　nanomaterial,　which　have　wide　applications　in　the　field　of　near-infrared　photoelectric　detections.　In　this　work,　high-quality　InxGa1-xAs　NWs　with　different　compositions　(In0.35Ga0.65As,　In0.41Ga0.59As,　In0.53Ga0.47As)　are　synthesized　by　two-step　chemical　vapor　deposition.　With　the　increase　of　In　component　of　InxGa1-xAs　NWs,　the　photocurrent　and　the　responsivity　of　the　photodetectors　increase　under　the　same　optical　power　density.　More　importantly,　high-performance　near-infrared　photodetectors　are　achieved　based　on　the　as-grown　In-rich　In0.53Ga0.47As　NWs　with　a　large　responsivity　of　5.01×103　A/W　and　a　high　detectivity　of　8.22×1010　Jones　under　1064　nm　irradiation.　This　work　indicates　the　great　application　potential　of　InxGa1-xAs　NWs　for　next-generation　high-performance　semiconductor　optoelectronic　devices.　©　2023　SPIE.