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Author:

Xie, Yi-Yang (Xie, Yi-Yang.) | Ni, Pei-Nan (Ni, Pei-Nan.) | Wang, Qiu-Hua (Wang, Qiu-Hua.) | Kan, Qiang (Kan, Qiang.) | Briere, Gauthier (Briere, Gauthier.) | Chen, Pei-Pei (Chen, Pei-Pei.) | Zhao, Zhuang-Zhuang (Zhao, Zhuang-Zhuang.) | Delga, Alexandre (Delga, Alexandre.) | Ren, Hao-Ran (Ren, Hao-Ran.) | Chen, Hong-Da (Chen, Hong-Da.) | Xu, Chen (Xu, Chen.) (Scholars:徐晨) | Genevet, Patrice (Genevet, Patrice.)

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EI Scopus SCIE PubMed

Abstract:

Vertical cavity surface-emitting lasers (VCSELs) have made indispensable contributions to the development of modern optoelectronic technologies. However, arbitrary beam shaping of VCSELs within a compact system has remained inaccessible until now. The emerging ultra-thin flat optical structures, namely metasurfaces, offer a powerful technique to manipulate electromagnetic fields with subwavelength spatial resolution. Here, we show that the monolithic integration of dielectric metasurfaces with VCSELs enables remarkable arbitrary control of the laser beam profiles, including self-collimation, Bessel and Vortex lasers, with high efficiency. Such wafer-level integration of metasurface through VCSEL-compatible technology simplifies the assembling process and preserves the high performance of the VCSELs. We envision that our approach can be implemented in various wide-field applications, such as optical fibre communications, laser printing, smartphones, optical sensing, face recognition, directional displays and ultra-compact light detection and ranging (LiDAR). Non-intrusive integration of metasurfaces with vertical cavity surface-emitting lasers enables fully arbitrary wavefront control for directional laser emission.

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Author Community:

  • [ 1 ] [Xie, Yi-Yang]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing, Peoples R China
  • [ 2 ] [Wang, Qiu-Hua]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing, Peoples R China
  • [ 3 ] [Zhao, Zhuang-Zhuang]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing, Peoples R China
  • [ 4 ] [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing, Peoples R China
  • [ 5 ] [Ni, Pei-Nan]Univ Cote Azur, CNRS, CRHEA, Valbonne, France
  • [ 6 ] [Briere, Gauthier]Univ Cote Azur, CNRS, CRHEA, Valbonne, France
  • [ 7 ] [Genevet, Patrice]Univ Cote Azur, CNRS, CRHEA, Valbonne, France
  • [ 8 ] [Kan, Qiang]Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China
  • [ 9 ] [Chen, Hong-Da]Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China
  • [ 10 ] [Chen, Pei-Pei]Natl Ctr Nanosci & Technol, Beijing, Peoples R China
  • [ 11 ] [Delga, Alexandre]III V Lab, Campus Polytech, Palaiseau, France
  • [ 12 ] [Ren, Hao-Ran]Ludwig Maximilians Univ Munchen, Fac Phys, Nanoinst Munich, Hybrid Nanosyst, Munich, Germany

Reprint Author's Address:

  • 徐晨

    [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing, Peoples R China;;[Genevet, Patrice]Univ Cote Azur, CNRS, CRHEA, Valbonne, France;;[Kan, Qiang]Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China

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Source :

NATURE NANOTECHNOLOGY

ISSN: 1748-3387

Year: 2020

Issue: 2

Volume: 15

Page: 125-,

3 8 . 3 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:169

Cited Count:

WoS CC Cited Count: 12

SCOPUS Cited Count: 260

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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