Ga2O3　exhibits　great　potential　for　applications　in　solar-blind　ultraviolet　photo　detector,　high-power　electronic　devices　and　solid-state　light-emitting　due　to　its　ultra-wide　band　gap　and　high　Baliga　figure　of　merit.　Here,　Ga2(NxO1-x)3　films　with　varied　nitrogen　contents　were　prepared　by　the　sol-gel　technique.　XRD　analysis　reveals　that　nitrogen　doping　contributes　for　growth　of　greater　crystalline　and　SEM-EDS　measurements　confirm　that　the　monoclinic　crystal　structure　of　Ga2(NxO1-x)3　is　maintained　to　doping　level　of　3.26wt%;　FTIR　information　indicates　that　nitrogen　prefers　to　substitute　for　the　O1　and　O2　site　of　Ga2O3;　XPS　offers　evidence　that　nitrogen　tends　to　occupy　oxygen　vacancies　and　generate　more　gallium　vacancies;　UV-VIS　shows　that　impurity　defects　appear　above　valence　band,　and　the　absorption　position　undergoes　a　red　shift　with　nitrogen　above　1.32wt%;　PL　shows　Ga2(NxO1-x)3　films　can　emit　light　of　various　colors　under　excitation　at　325nm,　and　the　acceptor　level　is　at　1.63eV-2eV　above　the　valence　band;　The　conductivity　of　Ga2(NxO1-x)3　films　is　changed　from　n-type　to　p-type　when　nitrogen-doping　is　0.96　wt%　and　the　I-V　curve　composed　of　Ga2(NxO1-x)3　and　Ga2O3　shows　PDCR　=　43　under　the　254nm　light.　Therefore,　the　development　of　nitrogen-doped　beta-Ga2O3　has　potential　opportunities　for　applications　in　photoelectric　devices.