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Author:

Qin, Yuan (Qin, Yuan.) | Liu, Weiqiang (Liu, Weiqiang.) | Li, Yuqing (Li, Yuqing.) | Wang, Zhanjia (Wang, Zhanjia.) | Chen, Hao (Chen, Hao.) | Wu, Haihui (Wu, Haihui.) | Cui, Shijin (Cui, Shijin.) | Yue, Penghao (Yue, Penghao.) | Zhang, Lele (Zhang, Lele.) | Zhang, Hongguo (Zhang, Hongguo.) | Yue, Ming (Yue, Ming.) (Scholars:岳明)

Indexed by:

EI Scopus SCIE

Abstract:

In recent years, the research focus has shifted towards the preparation of non-heavy rare earth (RE) -Fe -B magnets with high coercivity ( H cj ) by reducing the content of B element. In this work, we achieved resource-saving sintered (Nd, Ce) -Fe -B magnets by adjusting the B element content, optimizing microstructure, and enhancement of Nd/Ce element distribution. We conducted an analysis on the magnetic characteristics, phase composition, microstructure, magnetization reversal mechanism, and economic viability of these sintered magnets. With a decrease in the B element content from 0.96 wt% to 0.90 wt%, there is a increase of approximately 1 kOe in H c j .At the same time, the temperature coefficient of H cj has been improved, resulting in a absolute value decrease from 0.67%/ degrees C to 0.63%/ degrees C. The findings suggested that reducing the mass fraction of B element could facilitate the formation of a thicker grain boundary phase between the grains. It could significantly weaken the ferromagnetic coupling effect, and enhance the magnetic isolation effect between grains, resulting in a higher H cj . From an economic perspective, compared to the cost of magnet with similar coercivity prepared by increasing the RE content, the cost of magnet with low B element content was reduced by 554.4 US$/t , approximately saving 3.08%. This study provides a new theoretical foundation and experimental basis for resource-saving sintered (Nd,Ce)-Fe-B magnet preparation.

Keyword:

Resource-saving Sintered (Nd Ce)-Fe-B magnets B element content Temperature stability Coercivity

Author Community:

  • [ 1 ] [Qin, Yuan]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 2 ] [Liu, Weiqiang]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 3 ] [Li, Yuqing]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Wang, Zhanjia]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Chen, Hao]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Wu, Haihui]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 7 ] [Cui, Shijin]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 8 ] [Yue, Penghao]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 9 ] [Zhang, Lele]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 10 ] [Zhang, Hongguo]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 11 ] [Yue, Ming]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Zhang, Hongguo]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China;;[Yue, Ming]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China;;

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Source :

MATERIALS CHARACTERIZATION

ISSN: 1044-5803

Year: 2024

Volume: 211

4 . 7 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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