Considering　the　effects　of　trench　MIS　barrier　and　p-type　barrier　on　improving　the　characteristics　of　Schottky　diodes,　new　GaN　Schottky　diodes　structure　with　composed　trench　MIS　barrier　and　junction　barrier　are　proposed.　The　feature　of　proposed　structure　is　the　addition　of　a　p-type　barrier　region　on　the　TMBS　structure.　The　p-type　barrier　region　should　be　either　on　the　side　of　trenches　or　in　the　middle　of　two　trenches.　Then　the　influence　of　key　structure　parameters　of　p-type　barrier　region,　such　as　width,　junction　depth　and　doping　concentration　et　al,　on　the　static　characteristics　of　proposed　GaN　diode　are　simulation　studied.　The　structure　of　the　p-type　barrier　region　in　the　middle　of　two　trenches　has　optimized　characteristic,　and　the　breakdown　voltage　could　reach　1149　V　and　the　Baliga＇s　figure　of　merit　can　reach　1.263　GW/cm2.　These　results　will　provide　valuable　references　for　further　study　of　GaN　SBD.　©　2024　SPIE.