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Author:

Huang, Zuoyi (Huang, Zuoyi.) | An, Tong (An, Tong.) | Qin, Fei (Qin, Fei.) | Gong, Yanpeng (Gong, Yanpeng.) | Dai, Yanwei (Dai, Yanwei.) (Scholars:代岩伟) | Wang, Zhen (Wang, Zhen.)

Indexed by:

CPCI-S EI

Abstract:

Double-sided cooling (DSC) IGBT module has been greatly improved in heat dissipation performance and has been widely used. However, the heat dissipation efficiency of the two heat paths is different, which will reduces the service life and reliability of the module. In this paper, the finite element Analysis (FEA) is used to analyze the three-dimensional heat transfer model of DSC IGBT module, and the influence of the material layers inside DSC IGBT module on the heat dissipation performance is researched. The results were analyzed by orthogonal design. The results show that the height and material of spacer have great influence on the heat dissipation performance of DSC IGBT module, but the influence of the material of the mold compound and solder is not obvious. When the height of the spacer is 1.5mm, the spacer material is Ag, the mold compound material is Phenolic resin, and the solder material is Nano-silver paste, the heat dissipation efficiency of the two heat paths of the DSC IGBT module is the closest.

Keyword:

double-sided cooling heat dissipation performance insulated-gate bipolar transistor (IGBT)

Author Community:

  • [ 1 ] [Huang, Zuoyi]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Fac Mat & Mfg, Inst Elect Packaging Technol & Reliabil, Beijing, Peoples R China
  • [ 2 ] [An, Tong]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Fac Mat & Mfg, Inst Elect Packaging Technol & Reliabil, Beijing, Peoples R China
  • [ 3 ] [Qin, Fei]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Fac Mat & Mfg, Inst Elect Packaging Technol & Reliabil, Beijing, Peoples R China
  • [ 4 ] [Gong, Yanpeng]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Fac Mat & Mfg, Inst Elect Packaging Technol & Reliabil, Beijing, Peoples R China
  • [ 5 ] [Dai, Yanwei]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Fac Mat & Mfg, Inst Elect Packaging Technol & Reliabil, Beijing, Peoples R China
  • [ 6 ] [Wang, Zhen]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Fac Mat & Mfg, Inst Elect Packaging Technol & Reliabil, Beijing, Peoples R China

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Source :

2023 24TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, ICEPT

ISSN: 2836-9734

Year: 2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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