A　trench　termination　with　anode　electrode　extension　structure　for　beta-Ga2O3　diode　was　designed　and　simulation　studied.　The　simulation　employed　Sentaurus　TCAD　simulator.　The　influences　of　device＇s　geometric　parameters　on　the　device＇s　breakdown　characteristics　has　been　investigated.　These　geometric　parameters　include　termination　trench　depth,　anode　electrode　extension　length,　trench　termination　oxide　layer　thickness,　and　trench　termination　width.　Optimization　results　was　provided.　The　simulation　results　revealed　an　88%　increase　in　breakdown　voltage　for　the　optimized　termination　compared　to　the　structure　without　terminations.　Additionally,　the　termination　efficiency　approached　almost　100%.　Under　the　simulation　condition,　a　10　mu　m　increase　in　the　trench　termination　width　resulted　in　a　20%　decrease　in　leakage　current.　All　these　results　will　provide　valuable　references　for　further　research　on　beta-Ga2O3　trench　barrier　termination.