Hexagonal　ZnTiO3　(h-ZnTiO3)　films　with　stoichiometric　were　deposited　on　alpha-Al2O3　substrates　using　pulsed　laser　deposition　(PLD)　method　and　post　annealing　process.　The　effect　of　oxygen　partial　pressure　on　Zn/Ti　atomic　ratio,　as　well　as　the　influence　of　annealing　treatment　on　the　structural　and　optical　properties　of　the　films　were　investigated　in　detail.　The　optimum　h-ZnTiO3　film　was　deposited　under　5　Pa　oxygen　partial　pressure　and　annealed　at　800　degrees　C,　and　it　exhibited　excellent　crystalline　quality　and　an　optical　band　gap　of　3.72　eV.　A　photodetector　based　on　the　film　was　fabricated,　and　its　photoresponsivity　was　approximately　0.18　mA/W　under　308　nm　ultraviolet　light　irradiation.　This　demonstrates　that　as　a　wide　bandgap　semiconductor　material,　h-ZnTiO3　has　potential　applications　in　the　field　of　devices.