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Abstract:
La0.85Sr0.15MnO3 (LSMO)/TiO2 heterostructures are synthesized by RF magnetron sputtering with different LSMO thicknesses. The rectifying properties of the junctions are related to the LSMO thickness and good rectifying properties appear in the LSMO (100 nm)/TiO2 junction. Furthermore, an excellent rectifying characteristic is presented over a relatively wide temperature range for LSMO (100 nm)/TiO2 heterostructures. All samples exhibit a huge effective resistance, which plays an important role in the I-V curves as well as the rectifying properties. The diffusion potential of the heterostructures decreases as the measurement temperature increases, which is attributed to the modulation of the interface electronic structure of LSMO/TiO2 heterostructures. The metal-insulator (M-I) transition of LSMO also appears in the heterostructures and the increased sheet-resistance of heterostructures at low temperature is related to the introduction of effective resistance.
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Chinese Journal of Semiconductors
ISSN: 0253-4177
Year: 2008
Issue: 9
Volume: 29
Page: 1794-1798
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WoS CC Cited Count: 0
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ESI Highly Cited Papers on the List: 0 Unfold All
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30 Days PV: 1