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Abstract：
A novel n-MOSFET structure with P-type island in the buffer layer is proposed and simulation studies have been performed in this paper. Simulation results show that the peak current induced by heavy ions can be reduced owing to field modification effects of P-type island. © 2018 EPE Association.
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Year： 2018
Language： English
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 3
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