Enhanced Thermoelectric Properties of n-type Mg3Sb2 by Excess Magnesium and Tellurium Doping - Details

Author：

Wang, Yangzhong (Wang, Yangzhong.) | Zhang, Xin (Zhang, Xin.) | Wang, Yang (Wang, Yang.) | Liu, Hongliang (Liu, Hongliang.) | Zhang, Jiuxing (Zhang, Jiuxing.)

Indexed by：

EI Scopus SCIE

Abstract：

Mg3Sb2　shows　poor　comprehensive　thermoelectric　properties　mainly　because　its　conductivity　is　very　poor,　despite　it　has　very　low　thermal　conductivity.　Excess　Mg　combined　with　small　amount　of　Te　doping　can　control　carrier　type　and　carrier　concentration.　The　semiconductor　and　metallic　transport　mechanism　coordinate　to　control　the　electrical　transport　characteristics　and　improve　the　electrical　transport　performance.　The　lattice　thermal　conductivity　of　Mg3Sb2　decreases　after　Te　doping.　The　maximum　ZT　value　is　0.78　for　Mg3.2Sb1.99Te0.01　at　773　K.

Keyword：

carrier concentration thermoelectric thermal conductivity n-type Mg3Sb2

Author Community：

[ 1 ] [Wang, Yangzhong]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
[ 2 ] [Zhang, Xin]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
[ 3 ] [Wang, Yang]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
[ 4 ] [Liu, Hongliang]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
[ 5 ] [Zhang, Jiuxing]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
[ 6 ] [Zhang, Jiuxing]Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

Reprint Author's Address：

[Zhang, Xin]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China;;[Zhang, Jiuxing]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China;;[Zhang, Jiuxing]Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

Email：

zhxin@bjut.edu.cn |
zjiuxing@hfut.edu.cn

Show more details

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Source ：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

ISSN： 1862-6300

Year： 2019

Issue： 6

Volume： 216

2 . 0 0 0

JCR@2022

ESI Discipline： PHYSICS;

ESI HC Threshold：123

JCR Journal Grade：3

Cited Count：

WoS CC Cited Count： 28

SCOPUS Cited Count： 34

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 2

Affiliated Colleges：

材料与制造学部材料科学与工程学院

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