Optimum design methodology for thermally stable multi-finger power SiGe HBTs - Details

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Abstract：

The　two-dimensional　temperature　profile　of　a　multi-finger　power　SiGe　HBT　is　studied　with　the　electrothermal　model,　which　shows　that　there　is　an　uneven　temperature　profile　over　the　device　finger　for　HBT　with　uniform　finger　length.　Because　of　the　positive　current-temperature　feedback,　the　uneven　temperature　profile　will　leads　to　an　anomalous　current　distribution,　which　eventually　caused　the　thermal　instability.　To　improve　the　uneven　temperature　profile　and　enhance　the　thermal　stability,　the　HBT　with　non-uniform　finger　length　is　designed.　Considering　that　designing　multiple　finger　length　values　becomes　trivial　and　time-consuming　for　the　HBT　with　dozens　of　emitter　fingers,　a　new　thermal　design　methodology　namely　Grouping　and　Adjusting　(GA)　method　is　proposed　to　shorten　design　time.　Taking　30-finger　HBT　for　example,　a　detailed　design　procedure　is　present.　The　calculated　results　show　both　significant　improvement　on　the　peak　temperature　and　the　uniformity　of　SiGe　HBT　with　non-uniform　finger　length.　©　2010　IEEE.

Keyword：

Feedback Thermodynamic stability Design Si-Ge alloys Temperature control

Author Community：

[ 1 ] [Jin, D.Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Zhang, W.R.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Guan, B.L.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Chen, L.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Hu, N.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Xiao, Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Wang, R.Q.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China