Based　on　a　three-dimensional　thermal-electrical　model,　non-uniform　finger　spacing　power　SiGe　HBT　was　designed　and　fabricated.　Experiment　result　shows　that　the　peak　temperature　of　non-uniform　spacing　SiGe　HBT　is　lowed　by　22K　compared　with　that　of　uniform　space　HBT.　For　the　same　non-uniform　spacing　HBT,　temperature　non-uniformity　among　the　fingers　is　improved　obviously　at　different　biases.　The　higher　power　dissipation　PDC　is,　the　better　temperature　improvement　of　non-uniform　spacing　HBT　is.　Because　of　the　reducing　of　peak　temperature,　power　SiGe　HBTs　with　non-uniform　Spacing　can　work　at　higher　bias　and　has　higher　power　handling　capability.