Q-switched Yb: Lu2SiO5 laser with a SESAM - Details

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Abstract：

A　new　Yb-doped　crystal　Yb3+:　Lu2SiO5　laser　was　demonstrated.　The　laser　was　Q-switched　at　1058nm　by　an　InGaAs　saturable　absorber　above　25KHz.　The　slope　efficiency　were　4.6%　and　3.0%　for　CW　and　Q-switched　laser　respectively.　©　2006　Optical　Society　of　America.

Keyword：

Indium alloys Gallium compounds Gallium alloys Lutetium compounds Q switching Potassium alloys Semiconducting indium gallium arsenide Semiconductor alloys Silicon compounds Saturable absorbers Q switched lasers Ytterbium compounds

Author Community：

[ 1 ] [Song, Yanrong]College of Applied Science, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Hu, Jianghai]College of Applied Science, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Yan, Chengfeng]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
[ 4 ] [Zhao, Guangjun]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
[ 5 ] [Su, Liangbi]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
[ 6 ] [Xu, Jun]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
[ 7 ] [Guo, Kai]College of Applied Science, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Wang, Yonggang]Institute of Semiconductors, Chinese Academy of Science, Beijing 100081, China
[ 9 ] [Zhang, Zhigang]College of Applied Science, Beijing University of Technology, Beijing 100022, China
[ 10 ] [Zhang, Zhigang]Institute of Quantum Electronics, Peking University, Beijing, 100871, China

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Year： 2006

Language： English

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 3

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理学部

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