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Author:

Liu, Li-Ya (Liu, Li-Ya.) | Yang, Qing-Sheng (Yang, Qing-Sheng.) (Scholars:杨庆生) | Zhang, Y. X. (Zhang, Y. X..) (Scholars:张永祥)

Indexed by:

EI Scopus SCIE

Abstract:

Additive manufacturing technology is a novel approach for the development of the modern industry. Additive manufactured aluminium (Al) becomes the hotspot of current research in order to achieve the high precision products. However, the additive manufactured Al parts easily generate void defects due to the poor fluidity and low density of the materials, which in turn affects the mechanical properties. This paper studies the damage behavior of additive manufactured Al parts with void defects under tensile load in a mesoscale by using a two-dimensional rate-dependent crystal plasticity theory. The stress-strain curves and the plastic damages of single crystal and bicrystal with void defects are determined with different combinations of crystal orientations and loading conditions. It is found that the mechanical properties of additive manufactured aluminium severely depend on the crystal orientations and shapes of void defects. (C) 2018 Elsevier Ltd. All rights reserved.

Keyword:

Void defects Aluminium Plastic damage Additive manufacturing Crystal plasticity

Author Community:

  • [ 1 ] [Liu, Li-Ya]Beijing Univ Technol, Dept Engn Mech, Beijing 100124, Peoples R China
  • [ 2 ] [Yang, Qing-Sheng]Beijing Univ Technol, Dept Engn Mech, Beijing 100124, Peoples R China
  • [ 3 ] [Yang, Qing-Sheng]Univ New South Wales, Sch Engn & Informat Technol, Canberra, ACT 2600, Australia
  • [ 4 ] [Zhang, Y. X.]Univ New South Wales, Sch Engn & Informat Technol, Canberra, ACT 2600, Australia

Reprint Author's Address:

  • 杨庆生

    [Yang, Qing-Sheng]Beijing Univ Technol, Dept Engn Mech, Beijing 100124, Peoples R China;;[Yang, Qing-Sheng]Univ New South Wales, Sch Engn & Informat Technol, Canberra, ACT 2600, Australia

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Source :

MECHANICS RESEARCH COMMUNICATIONS

ISSN: 0093-6413

Year: 2019

Volume: 95

Page: 45-51

2 . 4 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:136

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 20

SCOPUS Cited Count: 18

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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