The　n-type　GaAs　substrates　are　used　and　their　conductive　type　is　changed　to　p-type　by　tunnel　junction　for　AlGaInP　light　emitting　diodes　(TJ-LED),　then　n-type,　the　effect　of　current　spreading　layer　is　enhanced　and　the　light　extraction　efficiency　is　increased　by　the　n-type　GaP　current　spreading　layer.　For　TJ-LED　with　3　μm　n-type　GaP　current　spreading　layer,　experimental　results　show　that　compared　with　conventional　LED　with　p-type　GaP　current　spreading　layer,　light　output　power　is　increased　for　50%　at　20　mA　and　for　66.7%　at　100　mA.