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Abstract：
650 nm/780 nm double wavelength multiquantum well (MQW) lasers combined by GaAs tunnel junction were designed through simulation and previous experiment data. The parts of 650 nm/780 nm multiquantum well active regions were simulated by computer. Lasers＇ transverse mode characteristic, near field distribution and far field angle were calculated. The lateral model of lasers with refractive index structure were qualitative analyzed, the conditions of perfect lateral mode were found.
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Journal of Optoelectronics Laser
ISSN： 1005-0086
Year： 2002
Issue： 5
Volume： 13
Page： 456-459
Cited Count：
WoS CC Cited Count： 0
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 2
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