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Author:

Jialiang, G. (Jialiang, G..) | Xiaohua, X. (Xiaohua, X..) | Yancai, W. (Yancai, W..) | Zhijie, S. (Zhijie, S..) | Xingjun, S. (Xingjun, S..)

Indexed by:

Scopus PKU

Abstract:

In order to find a new way for mirror precision machining of W-Mo alloy, precision grinding and ultra precision lapping experiments were conducted using electrolytic in-process dressing (ELID) technique. The generating mechanism of the mirror precision grinding of W-Mo alloy was analyzed. A surface roughness of Ra 0.020μm was obtained after ELID precision grinding. Then, at the optimized parameters such as lapping pressure 0.1∼0.3 N/cm2 and rotational speed 60∼100 r/min, a mirror precision surface roughness of Ra 0.012μm was achieved. The results proved that ELID technique guaranteed the machined surface quality, and the lapping pressure as well as the rotational speed were the main influencing factors during ultra precision lapping.

Keyword:

EFID grinding; Precision lapping and polishing; Surface roughness; W-Mo alloy

Author Community:

  • [ 1 ] [Jialiang, G.]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Xiaohua, X.]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Yancai, W.]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Zhijie, S.]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Xingjun, S.]Institute of Mechanical Manufacturing Technology, CAEP, Mianyang 621900, China

Reprint Author's Address:

  • [Jialiang, G.]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing 100124, China

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Source :

Diamond and Abrasives Engineering

ISSN: 1006-852X

Year: 2010

Issue: 3

Page: 6-9

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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