Indexed by:
Abstract:
For the 980 nm high-power laser diodes manufactured by Beijing Opto-electronic Technology Lab, the relation between the power conversion efficiency of the best operating point and the cavity length is analyzed. Experimental results show that the best output power increases while the power conversion efficiency decreases with the cavity length increasing. Analyses indicate that the defect power is the primary factor resulting in the decrease of photoelectric conversion efficiency and reducing the inner loss is most obvious way to improve the power efficiency of the best operating point.
Keyword:
Reprint Author's Address:
Email:
Source :
Semiconductor Optoelectronics
ISSN: 1001-5868
Year: 2009
Issue: 6
Volume: 30
Page: 835-837,873
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1