We　present　a　method　to　study　the　trap　characteristics　in　BiFeO3　thin　films,　which　display　a　resistance　switching　effect　caused　by　trapping/detrapping　of　charge　carriers.　The　method　consists　of　measuring　the　current　transients　for　the　detrapping　of　charge　carriers　from　trap　sites　and　subsequent　analysis　of　the　time　constant　from　the　current　transient　curve.　Using　this　method,　the　energy　level　of　the　traps　was　identified　to　be　0.71　+/-　0.06　eV.　The　parameters　of　the　trapping　pulses　(voltage　and　time　duration)　were　found　to　affect　the　time　constant,　indicating　a　close　relationship　between　the　escape　frequency　of　the　charge　carriers　and　the　structure　ordering　caused　by　polarization　and　the　filling　of　the　traps.　Published　by　AIP　Publishing.