A　method　of　producing　large　area　continuous　graphene　directly　on　SiO2　by　chemical　vapor　deposition　is　systematically　developed.　Cu　thin　film　catalysts　are　sputtered　onto　the　SiO2　and　pre-patterned.　During　graphene　deposition,　high　temperature　induces　evaporation　and　balling　of　the　Cu,　and　the　graphene　＂lands　onto＂　SiO2.　Due　to　the　high　heating　and　growth　rate,　continuous　graphene　is　largely　completed　before　the　Cu　evaporation　and　balling.　60　nm　is　identified　as　the　optimal　thickness　of　the　Cu　for　a　successful　graphene　growth　and　mu　m-large　feature　size　in　the　graphene.　An　all-carbon　device　is　demonstrated　based　on　this　technique.　(c)　2018　Author(s).