GaN-based　white　light-emitting　diodes　(LED)　were　applied　with　bias　of　-1600,　-1200,　-800,　-400,　400,　800,　1200　and　1600　V　electrostatic　discharge　in　human　body　mode.　The　electrical　and　optical　parameters　of　LED　were　measured　before　and　after　electrostatic　discharge,　and　the　influence　of　static　electricity　on　the　reliability　of　LEDs　was　theoretically　analyed.　Experimental　results　show　that:　the　I-V　characteristic　curve　and　the　optical　parameters　of　the　LED　samples　are　impacted　greatly　by　the　reverse　electrostatic　blow,　while　little　affected　by　the　positive　electrostatic　blow.　It　is　deduced　that　secondary　defects　and　melting　channel　appear　inside　the　chip　after　reverse　electrostatic　blow,　inducing　the　change　of　I-V　characteristic　curve,　the　reduce　of　luminous　flux,　and　accelerated　decay　rate.　In　the　range　of　0~1600　V,　the　LED　reliability　depends　very　little　on　the　positive　electrostatic　discharge.