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学者姓名：王晓蕾
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Abstract ：
Motivated by advances in spintronic devices, extensive explorations are underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of an intrinsic skyrmion state in the van der Waals ferromagnet Fe3GaTe2. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe3GaTe2 flakes. The ordering of skyrmion state is further analyzed. Our results suggest Fe3GaTe2 emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices. (c) 2024 The Authors. Published by Elsevier B.V. on behalf of The Chinese Ceramic Society. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
Keyword ：
Fe3GaTe2 Fe3GaTe2 Skyrmion lattice Skyrmion lattice van der Waals magnet van der Waals magnet
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| GB/T 7714 | Jin, Shuaizhao , Wang, Zhan , Dong, Shouzhe et al. Local manipulation of skyrmion lattice in Fe3GaTe2 at room temperature [J]. | JOURNAL OF MATERIOMICS , 2024 , 11 (2) . |
| MLA | Jin, Shuaizhao et al. "Local manipulation of skyrmion lattice in Fe3GaTe2 at room temperature" . | JOURNAL OF MATERIOMICS 11 . 2 (2024) . |
| APA | Jin, Shuaizhao , Wang, Zhan , Dong, Shouzhe , Wang, Yiting , Han, Kun , Wang, Guangcheng et al. Local manipulation of skyrmion lattice in Fe3GaTe2 at room temperature . | JOURNAL OF MATERIOMICS , 2024 , 11 (2) . |
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Abstract ：
Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric and ferromagnetic orders. The effective manipulation of their intrinsic anisotropy makes it promising to control multiple degrees of the storage "medium". Here, we have discovered intriguing in-plane electrical and magnetic anisotropies in van der Waals (vdW) multiferroic CuCrP2S6. The uniaxial anisotropies of current rectifications, magnetic properties and magnon modes are demonstrated and manipulated by electric direction/polarity, temperature variation and magnetic field. More important, we have discovered the spin-flop transition corresponding to specific resonance modes, and determined the anisotropy parameters by consistent model fittings and theoretical calculations. Our work provides in-depth investigation and quantitative analysis of electrical and magnetic anisotropies with the same easy axis in vdW multiferroics, which will stimulate potential device applications of artificial bionic synapses, multi-terminal spintronic chips and magnetoelectric devices. Manipulating electrical and magnetic anisotropies will stimulate multi-terminal device applications. Here, the authors discover axis dependence of current rectifications, magnetic properties and magnon modes in van der Waals multiferroic CuCrP2S6.
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| GB/T 7714 | Wang, Xiaolei , Shang, Zixuan , Zhang, Chen et al. Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6 [J]. | NATURE COMMUNICATIONS , 2023 , 14 (1) . |
| MLA | Wang, Xiaolei et al. "Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6" . | NATURE COMMUNICATIONS 14 . 1 (2023) . |
| APA | Wang, Xiaolei , Shang, Zixuan , Zhang, Chen , Kang, Jiaqian , Liu, Tao , Wang, Xueyun et al. Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6 . | NATURE COMMUNICATIONS , 2023 , 14 (1) . |
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Abstract ：
The non-collinear antiferromagnetic Weyl semimetal Mn3X (X = Ga, Ge, Sn) system has attracted a lot of attentions owing to its robust anomalous Hall effect (AHE), large spin Hall angle and small net magnetization at room temperature. The high spin-charge interconversion efficiency makes it a super candidate in topological antiferromagnetic spintronic devices, which could facilitate ultra-fast operation of high-density devices with low energy consumption. In this work, we have realized to obtain different chiral spin structures in Heusler alloy Mn3Ge thin films, which originate from different crystalline orientations. The high-quality (0002)- and (20 (2) over bar0)-oriented single phase hexagonal Mn3Ge films are achieved by controllable growth, annealing process and ion implantation. The various magnetic properties and AHE behaviors are observed along a and c crystal axes, equivalent to magnetic field in and out of the inverse triangular spin plane. The observation demonstrates the manipulation of crystal structure accompanied with chiral spin order in a non-collinear antiferromagnetic Mn3Ge film, which is induced by energy conversion and defect introduction. The in situ thermal treatment induces crystal phase rotation up to 90 degrees and robust AHE modulation, which is significantly important and highly desirable for flexible spin memory device applications.
Keyword ：
non-collinear chiral structure non-collinear chiral structure Heusler alloy Mn3Ge Heusler alloy Mn3Ge crystal orientation crystal orientation topological antiferromagnet topological antiferromagnet anomalous Hall effect anomalous Hall effect
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| GB/T 7714 | Wang, Xiaolei , Cui, Shuainan , Yang, Meiyin et al. Tuning crystal orientation and chiral spin order in Mn3Ge by annealing process and ion implantation [J]. | NANOTECHNOLOGY , 2023 , 34 (31) . |
| MLA | Wang, Xiaolei et al. "Tuning crystal orientation and chiral spin order in Mn3Ge by annealing process and ion implantation" . | NANOTECHNOLOGY 34 . 31 (2023) . |
| APA | Wang, Xiaolei , Cui, Shuainan , Yang, Meiyin , Zhao, Lei , Tan, Bi , Liu, Tao et al. Tuning crystal orientation and chiral spin order in Mn3Ge by annealing process and ion implantation . | NANOTECHNOLOGY , 2023 , 34 (31) . |
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Abstract ：
Spintronics and molecular chemistry have achieved remarkable achievements separately. Their combination can apply the superiority of molecular diversity to intervene or manipulate the spin-related properties. It inevitably brings in a new type of functional devices with a molecular interface, which has become an emerging field in information storage and processing. Normally, spin polarization has to be realized by magnetic materials as manipulated by magnetic fields. Recently, chiral-induced spin selectivity (CISS) was discovered surprisingly that non-magnetic chiral molecules can generate spin polarization through their structural chirality. Here, the recent progress of integrating the strengths of molecular chemistry and spintronics is reviewed by introducing the experimental results, theoretical models, and device performances of the CISS effect. Compared to normal ferromagnetic metals, CISS originating from a chiral structure has great advantages of high spin polarization, excellent interface, simple preparation process, and low cost. It has the potential to obtain high efficiency of spin injection into metals and semiconductors, getting rid of magnetic fields and ferromagnetic electrodes. The physical mechanisms, unique advantages, and device performances of CISS are sequentially clarified, revealing important issues to current scientific research and industrial applications. This mini-review points out a key technology of information storage for future spintronic devices without magnetic components.
Keyword ：
molecular chemistry molecular chemistry spintronic devices spintronic devices spin injection spin injection information storage information storage chiral-induced spin selectivity chiral-induced spin selectivity
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| GB/T 7714 | Shang, Zixuan , Liu, Tianhan , Yang, Qianqian et al. Chiral-Molecule-Based Spintronic Devices [J]. | SMALL , 2022 , 18 (32) . |
| MLA | Shang, Zixuan et al. "Chiral-Molecule-Based Spintronic Devices" . | SMALL 18 . 32 (2022) . |
| APA | Shang, Zixuan , Liu, Tianhan , Yang, Qianqian , Cui, Shuainan , Xu, Kailin , Zhang, Yu et al. Chiral-Molecule-Based Spintronic Devices . | SMALL , 2022 , 18 (32) . |
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Abstract ：
本发明公开了非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用。本发明两相共存Mn3Ge薄膜包括非共线反铁磁Mn3Ge六角相与铁磁Mn3Ge四方相两相共存。本发明两相共存Mn3Ge薄膜的制备方法及图案化的两相共存Mn3Ge霍尔bar的制备方法，包括如下步骤：在衬底上采用磁控溅射方法通过调节生长温度生长，得到两相共存Mn3Ge薄膜；对两相共存Mn3Ge薄膜进行光刻胶匀胶、曝光、显影、刻蚀、去胶，即得到图案化的两相共存Mn3Ge霍尔bar。本发明通过调节生长温度实现了非公线反铁磁与铁磁两相共存Mn3Ge薄膜的可控生长与反常霍尔效应的调控，从而获得了具有大反常霍尔效应和抗磁干扰性能优异的自旋存储材料，能够大大拓展Mn3Ge薄膜在自旋存储领域的应用。
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| GB/T 7714 | 王晓蕾 , 崔帅楠 , 杨倩倩 et al. 非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用 : CN202211316081.7[P]. | 2022-10-26 . |
| MLA | 王晓蕾 et al. "非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用" : CN202211316081.7. | 2022-10-26 . |
| APA | 王晓蕾 , 崔帅楠 , 杨倩倩 , 赵金良 . 非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用 : CN202211316081.7. | 2022-10-26 . |
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Abstract ：
本发明公开了一种自旋轨道矩磁阻式随机存储器及其制备方法与应用。本发明自旋轨道矩磁阻式随机存储器，包括：衬底和在衬底上依次层叠的非共线反铁磁层和磁阻隧道结；其中，磁阻隧道结包括由下至上依次层叠的遂穿层和铁磁性层。本发明制备方法中，采用磁控溅射方法依次形成非共线反铁磁层的材料层、磁阻隧道结的各材料层，对各材料层采用光刻技术和电子束曝光技术进行图案化，形成非共线反铁磁层以及磁阻隧道结，即得到自旋轨道矩磁阻式随机存储器。本发明当电流通入具有应力梯度的非共线反铁磁层中，将产生自旋轨道耦合，从而改变非共线反铁磁层的的磁矩方向，实现隧道结的无外场写入功能。
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| GB/T 7714 | 王晓蕾 , 崔帅楠 , 杨倩倩 et al. 一种自旋轨道矩磁阻式随机存储器及其制备方法与应用 : CN202211316068.1[P]. | 2022-10-26 . |
| MLA | 王晓蕾 et al. "一种自旋轨道矩磁阻式随机存储器及其制备方法与应用" : CN202211316068.1. | 2022-10-26 . |
| APA | 王晓蕾 , 崔帅楠 , 杨倩倩 , 尚紫璇 . 一种自旋轨道矩磁阻式随机存储器及其制备方法与应用 : CN202211316068.1. | 2022-10-26 . |
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Abstract ：
Developing a single-phase self-rectifying memristor is desirable and functionally adaptive to dynamic environmental stimuli variations. Here, the authors report a single phase CuInP2S6 based memristor with continuously tunable current rectifying. Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.
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| GB/T 7714 | Jiang, Xingan , Wang, Xueyun , Wang, Xiaolei et al. Manipulation of current rectification in van der Waals ferroionic CuInP2S6 [J]. | NATURE COMMUNICATIONS , 2022 , 13 (1) . |
| MLA | Jiang, Xingan et al. "Manipulation of current rectification in van der Waals ferroionic CuInP2S6" . | NATURE COMMUNICATIONS 13 . 1 (2022) . |
| APA | Jiang, Xingan , Wang, Xueyun , Wang, Xiaolei , Zhang, Xiangping , Niu, Ruirui , Deng, Jianming et al. Manipulation of current rectification in van der Waals ferroionic CuInP2S6 . | NATURE COMMUNICATIONS , 2022 , 13 (1) . |
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Abstract ：
Mn3Ge, a typical member of the Heusler family, has a high spin polarization and large spin Hall angle, making it a potential material for spintronic devices. Regarded as a topological Weyl semi-metal, Mn3Ge could be applied in topological spintronics owing to its special Fermi-arc-type surface states and various spin transport properties. In this study, we grew high-quality perpendicularly magnetized Mn3Gefilms through magnetron sputtering. X-ray diffraction (XRD) showed that hexagonal antiferromagnetic Mn3Ge was mixed with tetragonal ferromagnetic Mn3Ge. Thickness-dependent double-phase Mn3Ge films with large magnetic anisotropy and robust anomalous Hall effect (AHE) were obtained. The triangular spin structure of hexagonal Mn3Ge enhances the AHE; however, it shrinks the coercivity of the tetragonal ferromagnetic property. This manipulation of coexisting multi-phases comes from the strain of the substrate during growth, achieved by controlling the film thickness. Structural, magnetic, and transport measurements demonstrated stress modulation of the defect pinning, magnetic anisot-ropy, and spin transport properties. The coexistence of antiferromagnetic and ferromagnetic Mn3Ge provides the possibility of a new generation of Mn3X-based devices for applications in spin-torque memories.
Keyword ：
Spin -torque memories Spin -torque memories Anomalous Hall effect Anomalous Hall effect Strain of substrate Strain of substrate Double -phase Mn 3 Ge Double -phase Mn 3 Ge Heusler alloy Heusler alloy Magnetic anisotropy Magnetic anisotropy
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| GB/T 7714 | Wang, Xiaolei , Cui, Shuainan , Yang, Qianqian et al. Investigating the strain controlled epitaxial growth of Mn3Ge films through thickness modulation [J]. | APPLIED SURFACE SCIENCE , 2022 , 602 . |
| MLA | Wang, Xiaolei et al. "Investigating the strain controlled epitaxial growth of Mn3Ge films through thickness modulation" . | APPLIED SURFACE SCIENCE 602 (2022) . |
| APA | Wang, Xiaolei , Cui, Shuainan , Yang, Qianqian , Ma, Lin , Xu, Jiao , Xu, Guoliang et al. Investigating the strain controlled epitaxial growth of Mn3Ge films through thickness modulation . | APPLIED SURFACE SCIENCE , 2022 , 602 . |
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Abstract ：
Achieving highly efficient spin injection has been a challenging problem for a long time in spin logic devices. The chiral-induced spin selectivity (CISS) effect could induce spin polarization of electron transmission by chiral structure, providing a promising solution to resolve the above bottleneck. In this work, the significant CISS effect by self-assembled chiral organic molecules with helical structure was achieved on the copper (Cu) substrate covered with gold (Au) layer. We find that the spin polarization induced by the chiral molecules is more than 80%. Serving as an ultra efficient spin filter, the chiral organic molecules is demonstrated to be an effective way to generate pure spin currents and achieve highly efficient spin injection without ferromagnetic electrodes or external magnetic field. Based on these properties, a CISS based reconfigurable logic device is proposed. Due to the high spin injection efficiency, this CISS based device can realize 6 different logic operations with low energy consumption (1.2 pJ) and high speed (3.6 ns).
Keyword ：
self-assembled monolayer self-assembled monolayer Chiral organic molecules Chiral organic molecules Atomic measurements Atomic measurements Voltage measurement Voltage measurement spin injection efficiency spin injection efficiency Superconducting magnets Superconducting magnets Magnetic moments Magnetic moments chiral-induced spin selectivity chiral-induced spin selectivity Pollution measurement Pollution measurement Voltage control Voltage control reconfigurable logic device reconfigurable logic device Switches Switches
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| GB/T 7714 | Yang, Qianqian , Zhang, Zhizhong , Jiang, Xing'an et al. Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device [J]. | IEEE ELECTRON DEVICE LETTERS , 2022 , 43 (11) : 1862-1865 . |
| MLA | Yang, Qianqian et al. "Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device" . | IEEE ELECTRON DEVICE LETTERS 43 . 11 (2022) : 1862-1865 . |
| APA | Yang, Qianqian , Zhang, Zhizhong , Jiang, Xing'an , Wang, Xiaolei , Wang, Xueyun , Shang, Zixuan et al. Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device . | IEEE ELECTRON DEVICE LETTERS , 2022 , 43 (11) , 1862-1865 . |
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Abstract ：
Lateral effect photodiodes sense the position of a laser beam by measuring the change of current between opposite anodes and a common cathode. They either require a bias current or the current is photogenerated. In either case, their linearity is affected by the non-uniformity of the current distribution between the anodes. We here propose a bias-free, lateral photo-diode, which consists of a resistive layer forming an extended Schottky contact to an intrinsic semiconductor. In our sensor, the photo-generated carriers do not diffuse laterally. Rather, their localization under the laser-beam results in a reduction of the barrier height due to image force effect. An open-circuit voltage appears between two opposite electrodes that is linear with the laser-beam position. A tetra-lateral configuration, with four anodes at the edges of a square-shaped sensor, allows sensing in two dimensions. (c) 2021 Elsevier B.V. All rights reserved.
Keyword ：
Photo-detectors Photo-detectors Position sensing Position sensing Schottky junctions Schottky junctions Image force effect Image force effect
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| GB/T 7714 | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui et al. A bias-free, lateral effect position sensor photo-detector [J]. | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
| MLA | Wang, Xiaolei et al. "A bias-free, lateral effect position sensor photo-detector" . | SENSORS AND ACTUATORS A-PHYSICAL 330 (2021) . |
| APA | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui , Yang, Qianqian , Cui, Shuainan , Zhang, Jie et al. A bias-free, lateral effect position sensor photo-detector . | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
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