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学者姓名：邓金祥
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Abstract ：
Ga 2 O 3 material possesses extensive application potential and research value. Doping other elements into intrinsic Ga 2 O 3 is one of the common methods to enhance its performance and is also a hot research direction nowadays. In this paper, Ta element was introduced into Ga 2 O 3 material, and Ga 2 O 3 :Ta thin films with different Ta doping concentrations were fabricated using a dual-target RF co-sputtering system. The effects of Ta doping concentration on microstructure, optical, and optoelectronic properties of the films were meticulously investigated, and the optimal Ta doping concentration was determined. XPS results reveal that Ta entered Ga 2 O 3 lattice with a +5 oxidation state, and combined with EDS results, it is inferred that Ta successfully partially substitutes Ga. XRD and XPS results indicate that when the sputtering power of Ta 2 O 5 is 30 W, corresponding to a Ta doping concentration of 2.39 at.%, the film exhibits enhanced crystallinity. The Ga 2 O 3 -based MSM detector prepared under this condition demonstrates superior stability and detection sensitivity. Additionally, it also exhibits stable photoresponse to 365 nm light. This work promotes the application of Ga 2 O 3 material and provides new insights into improving the stability and performance of ultraviolet photodetectors.
Keyword ：
Microstructure Microstructure Optoelectronic properties Optoelectronic properties RF co-sputtering RF co-sputtering Optical properties Optical properties
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| GB/T 7714 | Meng, Xue , Deng, Jinxiang , Li, Ruidong et al. Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films [J]. | VACUUM , 2024 , 224 . |
| MLA | Meng, Xue et al. "Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films" . | VACUUM 224 (2024) . |
| APA | Meng, Xue , Deng, Jinxiang , Li, Ruidong , Zhang, Qing , Tian, Kun , Xu, Jiawei et al. Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films . | VACUUM , 2024 , 224 . |
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Abstract ：
The MSM structures based on high-quality 1.6-mu m-thick alpha-gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum efficiency (EQE), and detectivity of MSM structures based on alpha-Ga2O3 were studied in the wavelength range of 205-260 nm. The responsivity, the EQE, and the detectivity are 7.19 x 104 A x W-1, 3.79 x 105 arb.un., and 1.12 x 1018 Hz(0.5) x cm x W-1, respectively, for structures with an interelectrode distance of 30 mu m at an applied voltage of 10 V and exposure to radiation with a wavelength of 235 nm. The high values of the photoelectric characteristics were caused by the manifestation of an internal gain of the photoresponse due to the self-localization of holes in alpha-Ga2O3. The prospects of researches to develop UVC radiation detectors for wireless UVC communication were shown.
Keyword ：
Films Films Sensors Sensors Detectors Detectors halide vapor phase epitaxy (HVPE) halide vapor phase epitaxy (HVPE) Epitaxial growth Epitaxial growth solar-blind ultraviolet detectors (SBUVDs) solar-blind ultraviolet detectors (SBUVDs) alpha-gallium oxide Ga2O3 alpha-gallium oxide Ga2O3 Ocean temperature Ocean temperature Gallium Gallium Sea measurements Sea measurements
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| GB/T 7714 | Almaev, Aleksei , Nikolaev, Vladimir , Kopyev, Viktor et al. Solar-Blind Ultraviolet Detectors Based on High-Quality HVPE α-Ga2O3 Films With Giant Responsivity [J]. | IEEE SENSORS JOURNAL , 2023 , 23 (17) : 19245-19255 . |
| MLA | Almaev, Aleksei et al. "Solar-Blind Ultraviolet Detectors Based on High-Quality HVPE α-Ga2O3 Films With Giant Responsivity" . | IEEE SENSORS JOURNAL 23 . 17 (2023) : 19245-19255 . |
| APA | Almaev, Aleksei , Nikolaev, Vladimir , Kopyev, Viktor , Shapenkov, Sevastian , Yakovlev, Nikita , Kushnarev, Bogdan et al. Solar-Blind Ultraviolet Detectors Based on High-Quality HVPE α-Ga2O3 Films With Giant Responsivity . | IEEE SENSORS JOURNAL , 2023 , 23 (17) , 19245-19255 . |
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Abstract ：
Ga2O3 exhibits great potential for applications in solar-blind ultraviolet photo detector, high-power electronic devices and solid-state light-emitting due to its ultra-wide band gap and high Baliga figure of merit. Here, Ga2(NxO1-x)3 films with varied nitrogen contents were prepared by the sol-gel technique. XRD analysis reveals that nitrogen doping contributes for growth of greater crystalline and SEM-EDS measurements confirm that the monoclinic crystal structure of Ga2(NxO1-x)3 is maintained to doping level of 3.26wt%; FTIR information indicates that nitrogen prefers to substitute for the O1 and O2 site of Ga2O3; XPS offers evidence that nitrogen tends to occupy oxygen vacancies and generate more gallium vacancies; UV-VIS shows that impurity defects appear above valence band, and the absorption position undergoes a red shift with nitrogen above 1.32wt%; PL shows Ga2(NxO1-x)3 films can emit light of various colors under excitation at 325nm, and the acceptor level is at 1.63eV-2eV above the valence band; The conductivity of Ga2(NxO1-x)3 films is changed from n-type to p-type when nitrogen-doping is 0.96 wt% and the I-V curve composed of Ga2(NxO1-x)3 and Ga2O3 shows PDCR = 43 under the 254nm light. Therefore, the development of nitrogen-doped beta-Ga2O3 has potential opportunities for applications in photoelectric devices.
Keyword ：
Sol -gel Sol -gel I -V characteristics I -V characteristics Photoluminescence Photoluminescence N-doped N-doped
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| GB/T 7714 | Zhang, Q. , Deng, J. X. , Li, R. D. et al. Study on the structural, optical and electrical properties of N-doped Ga2O3 films synthesized by sol-gel method [J]. | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2023 , 170 . |
| MLA | Zhang, Q. et al. "Study on the structural, optical and electrical properties of N-doped Ga2O3 films synthesized by sol-gel method" . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 170 (2023) . |
| APA | Zhang, Q. , Deng, J. X. , Li, R. D. , Meng, X. , Hu, L. N. , Luo, J. X. et al. Study on the structural, optical and electrical properties of N-doped Ga2O3 films synthesized by sol-gel method . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2023 , 170 . |
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Abstract ：
Introducing other elements into gallium oxide materials to modify their properties is a hot topic today. This paper attempts to introduce Bi element to prepare (BixGa1-x)(2)O-3 alloy semiconductor thin film by radio frequency co-sputtering, so as to achieve precise and effective tuning of its band gap. The sputtering power of Ga2O3 target remains constant at 80 W. The content of Bi element in the material is adjusted by varying the sputtering power of the Bi2O3 target. Samples with different Bi doping concentrations were obtained after annealing at 800 degrees C for 2 h. Fortunately, (BixGa1-x)(2)O-3 semiconductor alloy films were successfully prepared by radio frequency co-sputtering, and the optical energy gap could be adjusted approximately linearly in the range of 5.14 to 5.27 eV by varying the Bi content. X-ray diffraction and scanning electron microscope results show that a phase transition occurs in the material when the sputtering power of Bi2O3 is 40 W. The results of Urbach energy and film transmittance indicate that moderate Bi doping can reduce the disorder of the material structure and improve the transmittance of the film. However, excessive Bi doping introduces more defects, increasing the scattering and absorption of the defects, ultimately leading to a reduction in film transmittance. These findings have propelled research in the field of gallium oxide doping and its band gap modulation.
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| GB/T 7714 | Meng, Xue , Deng, Jinxiang , Li, Ruidong et al. Study on the preparation and properties of (BixGa1-x)2O3 alloy semiconductor film deposited by radio frequency co-sputtering [J]. | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2023 , 34 (25) . |
| MLA | Meng, Xue et al. "Study on the preparation and properties of (BixGa1-x)2O3 alloy semiconductor film deposited by radio frequency co-sputtering" . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 34 . 25 (2023) . |
| APA | Meng, Xue , Deng, Jinxiang , Li, Ruidong , Almaev, Aleksei V. , Yang, Xiaolei , Zhang, Qing et al. Study on the preparation and properties of (BixGa1-x)2O3 alloy semiconductor film deposited by radio frequency co-sputtering . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2023 , 34 (25) . |
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Abstract ：
Here, niobium-doped monoclinic gallium oxide thin films of different thicknesses were deposited on p-Si (100) and quartz substrates by radio-frequency magnetron sputtering. All films were annealed in argon ambient. The crystal structure and surface morphology of the films were researched using x-ray diffraction and scanning electron microscopy. Then, their crystallite size was evaluated via the Debye-Scherrer formula. The results demonstrated that the films had a good crystal structure and a flat surface when the thickness was around 300 nm. The films' optical properties were also investigated, and the results showed that all of the films' transmittance is above 80% to ultraviolet-visible light whose wavelength is above 350 nm. Meanwhile, the films' optical band gap decreased as their thickness increased. The Urbach energy of all films was calculated by the Urbach rule, and the results indicated that the best crystal quality occurred when the thickness was around 300 nm. The films' electrical characteristics showed that the current was larger when the thickness was around 300 nm and that the contact between the Au electrode and films was Ohmic contact, independent of the film thickness and test conditions. These findings will provide useful information for the practical application of Nb-doped beta-Ga2O3 thin films.
Keyword ：
structure structure Thickness Thickness Nb-doped beta-Ga2O3 film Nb-doped beta-Ga2O3 film morphology morphology optical properties optical properties electrical characterization electrical characterization
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| GB/T 7714 | Li, Ruidong , Deng, Jinxiang , Xie, Peng et al. Effect of Thickness on Morphology, Structural, and Optical Properties of Nb-Doped beta-Ga2O3 Films Prepared by RF Magnetron Sputtering [J]. | JOURNAL OF ELECTRONIC MATERIALS , 2022 , 52 (1) : 251-257 . |
| MLA | Li, Ruidong et al. "Effect of Thickness on Morphology, Structural, and Optical Properties of Nb-Doped beta-Ga2O3 Films Prepared by RF Magnetron Sputtering" . | JOURNAL OF ELECTRONIC MATERIALS 52 . 1 (2022) : 251-257 . |
| APA | Li, Ruidong , Deng, Jinxiang , Xie, Peng , Zhang, Qing , Meng, Xue , Luo, Juxin et al. Effect of Thickness on Morphology, Structural, and Optical Properties of Nb-Doped beta-Ga2O3 Films Prepared by RF Magnetron Sputtering . | JOURNAL OF ELECTRONIC MATERIALS , 2022 , 52 (1) , 251-257 . |
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Abstract ：
(BixGa1-x)(2)O-3 films were prepared at 820 degrees C by sol-gel method, an ethylene glycol solution of hydrated gallium nitrate and bismuth nitrate stabilized by monoethanolamine, of which crystallization, surface morphology and electronic structure as well as optical properties were studied in detail by X-ray diffraction, Scanning electron microscope-energy dispersive spectrometer, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and Ultraviolet-visible spectroscopy. XRD showed Ga2O3 film prepared from solutions consisted of two crystal structures, beta and gamma, increasing Bi atoms into Ga2O3 that enable the inhibition of gamma phase formation and (BixGa1-x)(2)O-3 and Ga2O3 capable of holding the same monoclinic crystal structure. EDS displayed (BixGa1-x)(2)O-3 films of varied compositions were obtained with content of different Bi atoms into the solution, which kept same monoclinic crystal as beta-Ga2O3 when Bi ranged from 0 < x < 0.056. FTIR revealed that the absorption band below 480 cm(-1) corresponded to the octahedral position of Ga2O3 and the Bi atoms in the (BixGa1-x)(2)O-3 films substituted the Ga in the [GaO6] octahedron. XPS exhibited increasing Bi content raised Ga-3(+)/Ga ratio. UV-VIS provided evidence that optical band gap of (BixGa1-x)(2)O-3 down to 3.2 eV indicating Bi-doping achieved Ga2O3 band gap tunable, concurrently, the bowing parameter c = 1.83 eV was obtained on the basis of the fitting curve of band gap. [GRAPHICS] .
Keyword ：
Sol-gel Sol-gel Band gap Band gap (BixGa1-x)(2)O-3 (BixGa1-x)(2)O-3 Alloy Alloy Ga2O3 Ga2O3
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| GB/T 7714 | Zhang, Q. , Deng, J. X. , Li, R. D. et al. Study on the structure and properties of gallium bismuth oxide alloy thin films prepared by sol-gel method [J]. | JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY , 2022 , 103 (1) : 280-289 . |
| MLA | Zhang, Q. et al. "Study on the structure and properties of gallium bismuth oxide alloy thin films prepared by sol-gel method" . | JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY 103 . 1 (2022) : 280-289 . |
| APA | Zhang, Q. , Deng, J. X. , Li, R. D. , Luo, J. X. , Kong, L. , Meng, J. H. et al. Study on the structure and properties of gallium bismuth oxide alloy thin films prepared by sol-gel method . | JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY , 2022 , 103 (1) , 280-289 . |
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Abstract ：
采用高温固相法制备了磷酸盐荧光粉Ba3Yb1-x-y(PO4)3:xTb3+,yEu3+,利用X射线衍射对样品结构进行了分析,研究了荧光粉的发射光谱、激发光谱和发光强度时间衰减曲线,证明Tb3+和Eu3+之间存在能量传递.利用378 nm的光激发不同Tb3+和Eu3+配比的Ba3 Yb1-x-y(PO4)3:xTb3+,yEu3+荧光粉,发现其发光颜色呈现从绿光到白光、再到红光的变化,其中Ba3 Yb0.91(PO4)3:0.01Tb3+,0.08Eu3+样品的色坐标较接近标准白光.研究证明,磷酸盐Ba3 Yb1-x-y(PO4)3:xTb3+,yEu3+荧光粉是一种有潜力应用于白光发光二极管的材料.
Keyword ：
磷酸盐 磷酸盐 白光发光二极管 白光发光二极管 X射线衍射 X射线衍射 稀土发光 稀土发光
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| GB/T 7714 | 李婷婷 , 王吉有 , 刘悦 et al. 稀土铽铕掺杂Ba3 Yb(PO4)3发光材料的研究 [J]. | 沧州师范学院学报 , 2021 , 37 (1) : 36-41 . |
| MLA | 李婷婷 et al. "稀土铽铕掺杂Ba3 Yb(PO4)3发光材料的研究" . | 沧州师范学院学报 37 . 1 (2021) : 36-41 . |
| APA | 李婷婷 , 王吉有 , 刘悦 , 邓金祥 . 稀土铽铕掺杂Ba3 Yb(PO4)3发光材料的研究 . | 沧州师范学院学报 , 2021 , 37 (1) , 36-41 . |
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Abstract ：
Lateral effect photodiodes sense the position of a laser beam by measuring the change of current between opposite anodes and a common cathode. They either require a bias current or the current is photogenerated. In either case, their linearity is affected by the non-uniformity of the current distribution between the anodes. We here propose a bias-free, lateral photo-diode, which consists of a resistive layer forming an extended Schottky contact to an intrinsic semiconductor. In our sensor, the photo-generated carriers do not diffuse laterally. Rather, their localization under the laser-beam results in a reduction of the barrier height due to image force effect. An open-circuit voltage appears between two opposite electrodes that is linear with the laser-beam position. A tetra-lateral configuration, with four anodes at the edges of a square-shaped sensor, allows sensing in two dimensions. (c) 2021 Elsevier B.V. All rights reserved.
Keyword ：
Photo-detectors Photo-detectors Position sensing Position sensing Schottky junctions Schottky junctions Image force effect Image force effect
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| GB/T 7714 | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui et al. A bias-free, lateral effect position sensor photo-detector [J]. | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
| MLA | Wang, Xiaolei et al. "A bias-free, lateral effect position sensor photo-detector" . | SENSORS AND ACTUATORS A-PHYSICAL 330 (2021) . |
| APA | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui , Yang, Qianqian , Cui, Shuainan , Zhang, Jie et al. A bias-free, lateral effect position sensor photo-detector . | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
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Abstract ：
稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究
Keyword ：
X射线衍射 X射线衍射 白光发光二极管 白光发光二极管 磷酸盐 磷酸盐 稀土发光 稀土发光
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| GB/T 7714 | 李婷婷 , 王吉有 , 刘悦 et al. 稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究 [J]. | 李婷婷 , 2021 , 37 (1) : 36-41 . |
| MLA | 李婷婷 et al. "稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究" . | 李婷婷 37 . 1 (2021) : 36-41 . |
| APA | 李婷婷 , 王吉有 , 刘悦 , 邓金祥 , 沧州师范学院学报 . 稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究 . | 李婷婷 , 2021 , 37 (1) , 36-41 . |
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Abstract ：
The growth of trace amount of niobium (Nb) doped beta-Ga2O3 thin films have been demonstrated on (0001) sapphire substrates by radio frequency magnetron co-sputtering method. The crystallization, morphology and optical properties of Nb doped beta-Ga2O3 films have been investigated. The deep ultraviolet (DUV) photodetector with a metal-semiconductor-metal structure based on trace amount of Nb doped beta-Ga2O3 thin film was fabricated. The DUV photodetector exhibits high photo-to-dark-current ratio and fast photo-response speed, suggesting the performance of beta-Ga2O3 photodetector can be improved by doping trace amount of Nb in beta-Ga2O3 thin film.
Keyword ：
Deep ultraviolet photodetector Deep ultraviolet photodetector beta-Ga2O3 beta-Ga2O3 Photo-response Photo-response Nb-doped Nb-doped
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| GB/T 7714 | Zhang, H. , Deng, J. X. , Zhang, Q. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response [J]. | OPTIK , 2021 , 243 . |
| MLA | Zhang, H. et al. "Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response" . | OPTIK 243 (2021) . |
| APA | Zhang, H. , Deng, J. X. , Zhang, Q. , Wang, X. L. , Meng, J. H. , Xu, Z. Y. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response . | OPTIK , 2021 , 243 . |
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