Abstract ：

GaAs基垂直腔面发射激光器在干法刻蚀过程中,台面侧壁形成的缺陷会导致器件出现层结构分层、断裂以及氧化孔不规则等问题.针对该问题,提出了一种干法刻蚀与硫化铵钝化相结合的氧化前预处理方案,研究了硫化铵钝化处理对器件层结构以及氧化工艺稳定性的影响.扫描电子显微镜测试结果表明:器件侧壁层结构的分层现象减少,器件结构稳定性更好;高A1层的氧化速率更稳定,氧化孔形状更为规则.将该工艺方案用于制备氧化孔直径为5µm的940 nm垂直腔面发射激光器,室温下,与传统工艺制备的器件相比,钝化后的器件的斜率效率提高了5％,各器件之间的性能一致性更好.同时,在1mA的驱动电流下,激光器的边模抑制比可达36dB,处于单模激射状态.在优化后的氧化工艺条件下,制备了形状规范的氧化孔结构,进一步改善了氧化限制型垂直腔面发射激光器的性能.

Keyword ：

钝化 激光器 干法刻蚀 氧化孔 湿法氧化 垂直腔面发射激光器

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Abstract ：

High-quality bonding of 4-inch GaAs and Si is achieved using plasma-activated bonding technology. The influence of Ar plasma activation on surface morphology is discussed. When the annealing temperature is 300 ℃, the bonding strength reaches a maximum of 6.2 MPa. In addition, a thermal stress model for GaAs/Si wafers is established based on finite element analysis to obtain the distribution of equivalent stress and deformation variables at different temperatures. The shape variation of the wafer is directly proportional to the annealing temperature. At an annealing temperature of 400 ℃, the maximum protrusion of 4 inches GaAs/Si wafers is 3.6 mm. The interface of GaAs/Si wafers is observed to be dense and defect-free using a transmission electron microscope. The characterization of interface elements by X-ray energy dispersion spectroscopy indicates that the elements at the interface undergo mutual diffusion, which is beneficial for improving the bonding strength of the interface. There is an amorphous transition layer with a thickness of about 5 nm at the bonding interface. The preparation of Si-based GaAs heterojunctions can enrich the types of materials required for the development of integrated circuits, improve the performance of materials and devices, and promote the development of microelectronics technology. © 2024 Chinese Institute of Electronics.

Keyword ：

III-V semiconductors Silicon wafers Microelectronics Wafer bonding Annealing Surface morphology Temperature Thermal stress Gallium arsenide Morphology Chemical activation Heterojunctions Semiconducting gallium Transmission electron microscopy

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Abstract ：

The straight bandgap, high electron mobility, and good light absorption properties of gallium arsenide (GaAs) nanowires (NWs) make them great candidates for infrared photodetectors. In this study, we describe the synthesis of high-quality single-crystal GaAs NWs by solid-source chemical vapor deposition (SSCVD) and evaluate their photodetection performance. The prepared GaAs NWs exhibit excellent optoelectronic properties at a wavelength of 792 nm, with a photoresponsivity(R) of 3.65 A/W and a detectivity (D*) of 3.68×1011 Jones, as well as excellent sensitivity and reproducibility. These findings emphasize the potential application of GaAs NWs in photodetector technology. © 2024 SPIE.

Keyword ：

Photodetectors Single crystals Gallium arsenide Chemical vapor deposition Nanowires Photons Light absorption III-V semiconductors Semiconducting gallium arsenide Semiconducting gallium

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Abstract ：

本发明公开了一种片上生成矢量光束的垂直腔面发射激光器及制作方法，涉及微纳结构及半导体激光器技术领域，其结构主要包括欧姆接触保护电极、周期交替生长的上分布布拉格反射镜、电流限制氧化孔、氧化限制层；有源区、周期性交替生长的下分布布拉格反射镜、GaAs衬底层、P型金属电极层、钝化层、BCB固化绝缘层、N型金属电极层、出光孔和超构表面。本发明通过常规的半导体加工工艺，能够容易地在垂直腔面发射激光器出光端面集成双折射方形纳米柱结构，在芯片级上实现矢量光束的生成与操控；所开发的方法为VCSEL平台实现定制矢量光束铺平了道路，解决了传统的矢量光束生成装置结构复杂，体积大、效率低、不易操作等问题。

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The quest for pragmatic room-temperature (RT) magnetic semiconductors (MSs) with a suitable bandgap constitutes one of the contemporary opportunities to be exploited. This may provide a materials platform for to bring new-generation ideal information device technologies into real-world applications where the otherwise conventionally separately utilized charge and spin are simultaneously exploited. Here we present RT ferromagnetism in an Fe-doped SnSe (Fe:SnSe) van der Waals (vdW) single crystalline ferromagnetic semiconductor (FMS) with a semiconducting bandgap of similar to 1.19 eV (comparable to those of Si and GaAs). The synthesized Fe:SnSe single crystals feature a dilute Fe content of <1.0 at%, a Curie temperature of similar to 310 K, a layered vdW structure nearly identical to that of pristine SnSe, and the absence of in-gap defect states. The Fe:SnSe vdW diluted magnetic semiconductor (DMS) single crystals are grown using a simple temperature-gradient melt-growth process, in which the magnetic Fe atom doping is realized uniquely using FeI2 as the dopant precursor whose melting point is low with respect to crystal growth, and which in principle possesses industrially unlimited scalability. Our work adds a new member in the family of long-searching RT magnetic semiconductors, and may establish a generalized strategy for large-volume production of related DMSs.

Keyword ：

Curie temperature Fe-doped SnSe Room-temperature ferromagnetism Semiconducting energy gap Magnetic semiconductor

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Abstract ：

本发明公开了一种相干耦合PCSEL阵列芯片及制备方法，包括：设置在同一外延结构上的顶发射二维周期性PCSEL阵列芯片和片上光栅耦合层，片上光栅耦合层设置在相邻两PCSEL阵列芯片之间；顶发射二维周期性PCSEL阵列芯片的P型GaAs功能层刻蚀二维光子晶体，P型电极上刻蚀出射窗口；片上光栅耦合层的P型GaAs功能层刻蚀一维光栅，P型电极上未刻蚀出射窗口。本发明通过在片上光栅耦合层的P型GaAs区域刻蚀一维光栅，增强了PCSEL阵列芯片之间的相干耦合，建立了一种PCSEL芯片的复合阵列结构，解决了传统半导体芯片阵列高光束质量和高功率输出不能兼顾的问题，实现了PCSEL阵列芯片高亮度的相干光束输出。

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Abstract ：

A single layer of tightly arranged silicon oxide nanospheres was formed on GaAs substrate by gas-liquid interface self-assembly method. The silicon oxide nanospheres were used as the etching barrier layer, and the GaAs nanocolumn array was prepared by dry etching with inductively coupled plasma (ICP) of SiCl4/Ar gas. The results show that the morphology of GaAs nanocolumns can be optimized by controlling the technological conditions in the preparation process, such as reaction gas flow, sample chamber pressure and RF power. The optimal technological parameters are obtained, and the GaAs nanocolumn arrays with smooth and steep sidewalls are prepared. © 2023 SPIE.

Keyword ：

Gases Semiconducting gallium Self assembly Phase interfaces Nanospheres Silicon compounds Gallium arsenide Silicon III-V semiconductors Silicon oxides Inductively coupled plasma Flow of gases Morphology Dry etching Sols

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Abstract ：

本文针对大功率垂直腔面发射激光器(vertical cavity surface emitting laser,VCSEL)阵列热阻大、出光不均匀的问题,研究p-GaAs层欧姆接触电阻值的作用机理,降低欧姆接触串联电阻的方法,以提高VCSEL阵列出射光功率的均匀性.基于3种常用欧姆接触金属Ti/Au、Ni/Au、Ti/Al/Ti/Au,研究各层金属厚度和金属组合对与p型欧姆接触电阻的作用规律;结合等离子体表面处理工艺,改变金属/p-GaAs界面态,研究界面态对欧姆接触电阻的影响规律.实验对比分析得到金属Ti/Au结构电极欧姆接触的比接触电阻率最低,为3.25×10-4Ω·cm2;基于金半接触势垒模型,通过表面等离子体处理,界面势垒可降低12.6％(0.269 2 eV降至0.235 3 eV),等离子体轰击功率可调控金半界面的势垒和态密度.

Keyword ：

比接触电阻率 势垒 欧姆接触 等离子体表面处理 垂直腔面发射激光器(VCSEL)

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In this work, the surface morphology and internal defect evolution process of GaAs substrates implanted with light ions of different fluence combinations are studied. The influence of H and He ions implantation on the atomic mechanism of the blister phenomenon observed after annealing is investigated. Raman spectroscopy is used to measure the surface stress change of different samples before and after implantation and annealing. Optical microscopy and atomic force microscopy are used to characterize the morphology changes of the GaAs surface under different annealing conditions. The evolution of bubbles and defects in GaAs crystals is revealed by transmission electron microscopy. Through this study, it is hoped that ion implantation fluence, surface exfoliation efficiency and exfoliation cost can be optimized. At the same time, it also lays a foundation for the heterointegration of GaAs film on Si. © 2023 Chinese Institute of Electronics.

Keyword ：

High resolution transmission electron microscopy Semiconducting gallium Annealing Surface morphology Gallium arsenide Silicon III-V semiconductors Hydrogen Morphology Silicon compounds Helium Surface stress Ions

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Abstract ：

一种兼具减小发散角与散热的垂直腔面发射激光器，属于半导体光电子领域。所述激光器包括：n型电极，GaAs衬底，n型布拉格反射镜，n‑间隔层，量子阱结构，p‑间隔层，p型布拉格反射镜，位于p型布拉格反射镜底部的氧化限制层，隔离层，p型电极，散热机构。本发明设置散热机构，散热机构制备在发光区内，或制备在发光区外，或同时制备在发光区内和发光区外。通过合理设计能够得到器件内部不同的温度差异分布，温差导致材料的折射率差发生变化，得到不同的波导效应，能够得到发散角更小的器件，同时器件的热性能得到明显改善。本发明解决了制备VCSEL过程中，刻蚀上DBR层对器件可靠性造成影响的问题，也解决了大功率VCSEL的散热问题。

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