Research Progress on Doping Process and Properties of β-Ga2O3 Thin Film [β-Ga2O3薄膜掺杂工艺及性能研究进展] - 文章详情页

作者：

Zhang, H. (Zhang, H..) | Deng, J.-X. (Deng, J.-X..) (学者：邓金祥) | Bai, Z.-Y. (Bai, Z.-Y..) | Pan, Z.-W. (Pan, Z.-W..) | Kong, L. (Kong, L..)

收录：

Scopus PKU CSCD

摘要：

β-Ga2O3　thin　film　has　been　considered　as　one　of　the　most　promising　materials　in　the　field　of　photoelectric　detector　and　light　emitting　devices　because　of　its　wide　band　gap,　high　stability　and　low　production　cost.　However,　the　low　conductivity　of　β-Ga2O3　has　limited　its　application　in　some　fields.　And　improving　the　optical　and　electrical　properties　of　β-Ga2O3　thin　films　by　doping　method　has　attracted　many　researchers＇　attention.　This　paper　introduces　several　common　doping　methods　and　the　effect　of　doping　on　the　structure　and　photoelectric　properties　of　β-Ga2O3　thin　film,　and　the　future　research　work　is　also　prospected.　©　2017,　Chinese　Ceramic　Society.　All　right　reserved.

关键词：

Doping; Thin film; Β-Ga2O3

作者机构：

[ 1 ] [Zhang, H.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Deng, J.-X.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Bai, Z.-Y.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Pan, Z.-W.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Kong, L.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China

通讯作者信息：

邓金祥
[Deng, J.-X.]College of Applied Sciences, Beijing University of TechnologyChina

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