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The electronic structure, density of states and charge populations of the Mg doped CaMnO 3 oxide for Ca site has been studied by the psudo-potential density funtional theory calculation method, the electrical properties of the doped oxide have been analyzed thereafter. The calculational results show that the Mg doped CaMnO 3 oxide has indirect band gap yet, the band gap has been slightly decreased from 0.756 eV to 0.734 eV. The peak value of density of states curves locates at -0.8 eV for the pure CaMnO 3 oxide and the Mg doped CaMnO 3 oxide. The Mn contributes less to density of states at Fermi level, however the O atom and the Ca atom contribute more to density of states at Fermi level. The Mg has stronger capability of releasing electrons into the system than that of the Ca, it should belong to electron carrier doping type for the Mg doping for Ca for the CaMnO 3 oxide system. The Mg doping for Ca should enhance the electrical conduction capablity for the CaMnO 3 oxide, the electrical property should be strengthed. © 2017, Chinese Ceramic Society. All right reserved.
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