In　this　study,　Bi　was　selected　to　dope　PbTe　nanocubes　to　develop　high　performance　n-type　PbTe-based　thermoelectric　materials　via　nanostructure　engineering　using　a　facile　solvothermal　method.　Bi　dopants　effectively　improve　the　electrical　transport　properties　of　the　as-sintered　PbTe　nanomaterials　by　tuning　the　carrier　concentrations,　achieving　promising　electrical　conductivity　and　Seebeck　coefficient　which　are　comparable　to　bulk　materials.　Moreover,　a　low　lattice　thermal　conductivity　has　been　secured　in　the　sintered　Bi-doped　PbTe　nanomaterials,　which　is　remarkably　lower　than　its　bulk　counterparts.　Extensive　experimental　and　theoretical　evidences　reveal　that　such　low　lattice　thermal　conductivity　is　attributed　to　the　enhanced　phonon　scattering　by　the　high　density　of　grain　boundaries　and　dislocations,　in　turn,　leading　to　an　enhanced　peak　ZT　similar　to　1.35　at　675　K　for　n-type　Pb0.99Bi0.01Te.